Hyundai Electronics Industries Co. Ltd.

Jin-Seong Oh

Jae-Beom Park

Cheol-Soo Park

Yo-Hwan Koh

Young-Jin Park

When contacting a bit line and a charge storage electrode to a source/drain of the MOS transistor during a manufacturing process of a highly integrated semiconductor device, a contact pad is formed by filling up polysilicon into a contact hole that had been made using a self-align method in order not to damage the word line or the bit line as a result of a small processing margin during a contact hole forming process. Also, the occurrence of a topological difference during a semiconductor manufacturing process is minimized by forming an oxide layer such as SOG, BPSG, TEOS, and PECVD oxide over the top of the field oxide for a flattening effect.

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Seoul, South Korea

Jin-Seong Oh