Samsung Electronics Co., Ltd.

Jin-seok Heo

Jeong-Ho Yeo

Seok-Hwan Oh

Chang-min Park

In-Sung Kim

Jin-hong Park

Dae-youp Lee

Jin-Hong Park

Sung-Joo Kim

Joo-On Park

In-sung Kim

Do-Hyun Seo

Jae-Pil Lee

Sung-Jo Hwang

Da-Hae Lee

A method of manufacturing a semiconductor device includes irradiating a first photoresist layer via a light source, measuring a first exposure intensity of the first photoresist layer, irradiating a second photoresist layer via the light source, measuring a second exposure intensity of the second photoresist layer, subtracting the second exposure intensity from the first exposure intensity, and subsequent to the subtracting, exposing a third photoresist layer formed on a semiconductor substrate by using the light source, wherein an out-of-band (OoB) extreme ultraviolet (EUV) light eliminating layer is formed on the second photoresist layer.

Method of manufacturing a semiconductor device

An apparatus for generating extreme ultraviolet light includes a droplet generator which provides a droplet to react with light from a light source to generate extreme ultraviolet light, a droplet collector which collects the droplet, and a droplet detector which includes a plurality of pressure sensors, the pressure sensors detect a position of the droplet provided to the droplet collecting unit.

Apparatus for generating extreme ultraviolet light

Provided is an apparatus for generating extreme ultraviolet light. The apparatus includes a collector mirror unit, a gas supply unit configured to supply a processing gas to the collector mirror unit, a gas supply nozzle arranged in at least one area of the collector mirror unit and configured to supply the processing gas to a surface of the collector mirror unit, and a controller configured to adjust a shape of a spray hole of the gas supply nozzle. The shape of the spray hole may be changed according to a control operation of the controller.

Apparatus and system for generating extreme ultraviolet light and method of using the same

A method of manufacturing a mask includes dividing an upper surface of a template having a design pattern into a plurality of regions, the template being arranged over a polymer layer on a mask substrate, correcting a distorted region among the regions, pressing the polymer layer with the template to form a mask pattern corresponding to the design pattern on the polymer layer; and curing the mask pattern.

Apparatus for manufacturing a mask

A method of measuring an overlay of an object is provided. In the method, first information of a first structure may be obtained. A preliminary structure may be formed on the first structure. Second information of the preliminary structure may be obtained. The first information and the second information may be processed to obtain virtual information of a second structure that would be formed on the first structure if a process is performed on the preliminary structure. A virtual overlay between the first structure and the second structure may be measured using the virtual information.

Method of measuring an overlay of an object

A method of fabricating a nanoimprint lithography template includes installing a reticle on a reticle stage of scanning lithography equipment having a light source, the reticle stage and a template stage, mounting a template substrate on the template stage, and scanning the template substrate with light from the light source in an exposure process in which the light passes through the reticle and impinges the template substrate at an oblique angle of incidence.

Method of fabricating and correcting nanoimprint lithography templates

Provided are a reflective reticle chuck, a reflective illumination system including the chuck, a method of controlling the flatness of a reflective reticle using the chuck, and a method of manufacturing a semiconductor device using the chuck. The reflective reticle chuck includes a fixed portion and a mobile portion that together provide a securing surface for the reflective reticle. The mobile portion may alter a height of the securing surface relative to the fixed portion.

Reflective reticle chuck, reflective illumination system including the same, method of controlling flatness of reflective reticle using the chuck, and method of manufacturing semiconductor device using the chuck

The energy distribution of exposure light directed passing through the slit of an exposure apparatus is determined. A photoresist layer on a substrate is exposed over a plurality of shots while changing the intensity of the exposure light for each shot. Then the photoresist layer is developed to form a sample photoresist layer. An image of the developed sample photoresist layer is analyzed for color intensity. Values of the color intensity across a selected one of the shots are correlated with values of the intensity of the exposure light to produce an energy distribution of the exposure light along the length of the slit. The energy distribution is used to change the slit so that a more desirable energy distribution may be realized when the slit is used in a process of manufacturing a semiconductor device.

Photolithography method including technique of determining distribution of energy of exposure light passing through slit of exposure apparatus

A method of detecting reticle error may include using an optical source of an exposure unit to cause light to be incident on a reticle installed in the exposure unit, and detecting the reticle error using only 0diffraction light from among diffraction lights transmitted through the reticle. A method of detecting reticle error may include: installing a reticle, including a mask substrate and mask patterns having a critical dimension formed on the mask substrate, in an exposure unit to cause light to be incident on the reticle; exposing a photoresist film disposed on a wafer in the exposure unit using only 0diffraction light from among diffraction lights transmitted through the reticle; developing the exposed photoresist film; and analyzing a thickness change, an image, or the thickness change and image of the developed photoresist film, in order to detect the reticle error at a wafer level.

Growing community of inventors

Suwon-si, South Korea

Jin-seok Heo