Samsung Display Co., Ltd.

Dongwoo Fine-chem Co., Ltd.

Jin Seock Kim

Young Dae Kim

Jonghee Park

Jong Hee Park

Hyun Min Cho

Yu-Gwang Jeong

Tae Sung Kim

Sang Gab Kim

Su Bin Bae

Sang Gyun Kim

Kil Won Cho

Ki Tae Kim

Hyo Min Ko

Hansol Lee

Kitae Kim

Sang-woo Kim

Dae-Woo Lee

Bong Won Lee

Won Ho Lee

Pil Soon Hong

Gwui-Hyun Park

Young-Chul Park

Hyun-Cheol Shin

Sang Jin Park

Young-Jin Yoon

Dae-woo Lee

Sang-Hyuk Lee

Gyu-Po Kim

Chui Won Park

Gi Yong Nam

Il-Ryong Park

Bong-Yeon Won

A display device includes a substrate having a display area and a peripheral area, a pixel disposed on the substrate in the display area, the pixel including a pixel circuit, a pixel electrode electrically connected to the pixel circuit, an emission layer disposed on the pixel electrode, and an opposite electrode disposed on the emission layer, a power supply line disposed on the substrate in the peripheral area, the power supply line for supplying a power voltage to the pixel, an insulating layer covering the pixel circuit and the power supply line, the insulating layer including an opening exposing at least a portion of the power supply line, and a dummy pattern including a same material as the pixel electrode, the dummy pattern covering a sidewall of the power supply line exposed by the opening of the insulating layer.

Display device and method of manufacturing the same

An manufacturing method of a display device may include the following steps: forming a transistor on a substrate; forming an insulating layer on the transistor; forming a conductive layer including silver on the insulating layer; forming a photosensitive member on the conductive layer; forming an electrode of a light-emitting element by etching the conductive layer; performing plasma treatment on a structure that comprises the electrode, the plasma treatment using a gas including a halogen; and removing a product that is resulted from the plasma treatment.

Display device and manufacturing method thereof

A method of manufacturing a display apparatus includes forming a first conductive layer on a base substrate including a panel area and a margin area disposed next to the panel area, the margin area including a dummy pattern area, forming a photoresist layer on the first conductive layer, forming a photoresist pattern by exposing and developing the photoresist layer, forming a first conductive pattern by etching the first conductive layer using the photoresist pattern, and removing the photoresist pattern. The forming the first conductive pattern includes forming a first pixel circuit pattern in the panel area, and forming a dummy pattern in the dummy pattern area of the margin area. An opening ratio of a portion where the dummy pattern is not formed with respect to the dummy pattern area is about 30% or more.

Method of manufacturing display apparatus

A phosphoric acid-free etchant composition and a method of forming a wiring, the composition including about 40 wt % to about 60 wt % of an organic acid compound; about 6 wt % to about 12 wt % of a glycol compound; about 1 wt % to about 10 wt % of nitric acid, sulfuric acid, or hydrochloric acid; about 1 wt % to about 10 wt % of a nitrate salt compound; and water, all wt % being based on a total weight of the phosphoric acid-free etchant composition.

Etchant composition and forming method of wiring using etchant composition

An organic light emitting diode display device includes a substrate, a pixel structure, a lower blocking member, an upper blocking member, and a metal member. The substrate includes a display area and a peripheral area. The pixel structure is in the display area on the substrate. The lower blocking member is in the peripheral area on the substrate and surrounds the pixel structure, and includes a first side surface adjacent to the pixel structure, a second side surface, and a top surface. The upper blocking member is on the top surface and the second side surface of the lower blocking member, and constitutes a first blocking structure with the lower blocking member. The metal member is between the first blocking structure and the substrate while making contact with a bottom surface of the upper blocking member on the second side surface of the lower blocking member.

Organic light emitting diode display device

A display device includes: a substrate including a display area and a non-display area around the display area; a light-emitting element disposed in the display area; an encapsulating layer sealing the light-emitting element; and a dam disposed in the non-display area. The dam includes a first layer and a second layer on the first layer, the first layer includes a first portion with a first height and a second portion with a second height that is less than the first height, and the second layer covers a lateral surface of the first portion.

Display device

A display device includes an insulating layer disposed on a substrate, a pixel electrode including a first conductive layer, a second conductive layer, and a third conductive layer sequentially stacked on the insulating layer, a pixel defining layer covering the pixel electrode and partially exposing the pixel electrode through an opening, an organic light emitting layer disposed in the opening of the pixel defining layer, and an opposing electrode disposed on the organic light emitting layer and overlapping the pixel electrode. A length of the first conductive layer is less than a length of the second conductive layer.

An etchant includes about 8 wt % to about 12 wt % of nitric acid, about 3 wt % to about 8 wt % of alkylsulfonic acid, about 7 wt % to about 12 wt % of a sulfate, about 40 wt % to about 55 wt % of an organic acid, about 0.5 wt % to about 5 wt % of an organic acid salt, and a balance of water.

Etchant and method for manufacturing display device using the same

An etchant composition is presented. The composition includes: 18 wt % to 25 wt % of a first organic acid compound; 15 wt % to 20 wt % of a second organic acid compound; 8.1 wt % to 9.9 wt % of an inorganic acid compound; 1 wt % to 4.9 wt % of a sulfonic acid compound; 10 wt % to 20 wt % of a hydrogen sulfate salt compound; 1 wt % to 5 wt % of a nitrogen-containing dicarbonyl compound; 1 wt % to 5 wt % of an amino acid derivative compound; 0.1 wt % to 2 wt % of an iron-containing oxidizing agent compound; and a balance amount of water.

Etchant composition and manufacturing method of metal pattern using the same

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Seongnam-si, South Korea

Jin Seock Kim