Samsung Electronics Co., Ltd.

Adeka Corporation

Jin-Seo Lee

Youn-Joung Cho

Jung-sik Choi

Atsushi Sakurai

Tomoharu Yoshino

Haruyoshi Sato

Kyoo-Chul Cho

Atsuya Yoshinaka

Junji Ueyama

Senji Wada

Masako Shimizu

Jun-Hyun Cho

Hyo-Jin Yun

Ji-Man Park

A method of forming a pattern includes forming an underlayer on an etching target layer by a chemical vapor deposition (CVD) process, the underlayer including a silicon compound combined with a photoacid generator (PAG), forming a photoresist layer on the underlayer, irradiating extreme ultraviolet (EUV) light on the photoresist layer to form a photoresist pattern, and etching the etching target layer using the photoresist pattern as an etching mask.

Methods of forming a pattern and methods of manufacturing a semiconductor device using the same

The &#x3b2;-ketoimine ligand is represented by the following formula 1: wherein R1 and R2 are each independently a C1-C5 alkyl group. A metal complex compound includes the &#x3b2;-ketoimine ligand. A method of forming the &#x3b2;-ketoimine ligand and a method of forming a thin film using the metal complex compound including &#x3b2;-ketoimine ligand are provided.

&#x3b2;-ketoimine ligand, method of preparing the same, metal complex comprising the same and method of forming thin film using the same

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Anyang-si, South Korea

Jin-Seo Lee