Ajou University Industry-Academic Cooperation Foundation

Wonik Ips Co., Ltd.

Jin Seo Kim

Sang Yeon Lee

Won Jun Jang

Dae Seong Lee

Hyungtak Seo

Joo Suop Kim

Chang Hun Kim

Ah Young Hwang

Won Sik Ahn

The present invention relates to an internal chamber processing method, and more particularly, to an internal chamber processing method for performing processing on a chamber and a component inside the chamber. Disclosed is an internal chamber processing method for processing the inside of a chamber in which substrate processing is performed, the method including a pressurizing operation (S) of raising a pressure inside a chamber to a first pressure (P) higher than the atmospheric pressure by using a pressurized gas and a depressurizing operation of lowering the pressure inside the chamber from the first pressure (P) to a second pressure (P) after the pressurizing operation (S). The pressurizing operation (S) and the depressurizing operation (S) are performed in a state in which a substrate to be processed is removed from the inside of the chamber.

Internal chamber processing method and substrate processing method

A method for controlling an electric conductivity of a metal oxide thin film is disclosed. The method may include forming a metal oxide thin film; applying thermal treatment to the metal oxide thin film; and irradiating UV (ultraviolet)-rays to the metal oxide thin film in an atmosphere containing water molecules and oxygen molecules. Thus, the hydrogen may be doped into the metal oxide thin film to improve the electric conductivity of the metal oxide thin film.

Method of controlling electric conductivity of metal oxide thin film and thin film transistor including the metal oxide film having the controlled electric conductivity

Growing community of inventors

Seoul, South Korea

Jin Seo Kim