Hynix Semiconductor Inc.

Cj Cheiljedang Corporation

Jin Sang Park

Se Aug Jang

Tae Kyun Kim

In Seok Yeo

Heung Jae Cho

Soon Hee Kwon

Kwan Yong Lim

Dae Gyu Park

Tae Ho Cha

Hong Wook Park

Jong Hyun Ryoo

Min Choul Shin

Present invention relates to a process for preparing soybean curd, including removing moisture of non-standardized soybean curd; mixing the non-standardized soybean curd of which moisture was removed with soybean milk; obtaining micronized solution of soybean curd by grinding and filtering a mixture thereof; and mixing the micronized solution of soybean curd with a coagulant and soybean milk so as to coagulate it.

Process for preparing soybean curd using micronized solution of soybean curd

A method of manufacturing semiconductor devices forms a surface channel CMOSFET in the process of manufacturing a metal gate. The method forms a (Ti Al ) N film (where z ranges from about 0.0 to about 0.2) having a work function value ranging from about 4.2 to about 4.3 eV on a gate insulating film in a nMOS region, a (Ti Al ) N film (where z ranges from about 0.3 to about 0.6) having a work function value ranging from about 4.8 to about 5.0 eV on the gate insulating film in a pMOS region, thus implementing a surface channel CMOS device both in the nMOS region and the pMOS region. Therefore, the threshold voltage is reduced.

Method of manufacturing semiconductor devices with titanium aluminum nitride work function

Growing community of inventors

Chungcheongbuk-do, South Korea

Jin Sang Park