Industry-University Cooperation Foundation Hanyang University

Other

Samsung Electronics Co., Ltd.

Korea Institute of Science and Technology

Hanyang Hak Won Co., Ltd.

Jin Pyo Hong

Tae Yoon Kim

Gwang Ho Baek

Hae Soo Park

Gabriel Jang

Jeong Hun Shin

Seung Mo Yang

Ah Rahm Lee

Kap Soo Yoon

Sang Ho Yoon

Eun Joo Roh

Joo Yeon Jeong

Ki Un Lee

Young Bin Hong

Chang Mo Lee

Young Ho Do

Jeong Woo Seo

Ja Bin Lee

Chang Hyo Lee

Chang Joon Lee

Won Pyo Hong

Seung Gyun Jung

Gi Hoon Kim

Sang Bin Song

Da Seul Hyeon

Yoon Seong Choi

Chae Ok Kim

Dae Il Seok

Sung Bok Lee

Joung Wook Park

Bo Hyun Jo

Sang Soo Kang

June-Sik Kwak

Yoon Cheol Bae

Bo Ra Mi Jeon

Jae Yeong Joo

Disclosed is a selective device having high selectivity and temperature stability. The selective device has a doped insulating layer. The doped insulating layer has a metal oxide and a chalcogen element introduced into the metal oxide. Metal oxide has amorphous structure with minimized defects, and the introduced chalcogen elements form a conductive channel at a specific voltage and realize bi-directional switching characteristics.

Selective element doped with chalcogen element

A selection device and a crosspoint memory including the same are provided. The selection device has a lower electrode. A polycrystalline metal oxide layer including insulating crystal grains and a conductive nanochannel formed in a grain boundary between the crystal grains is disposed on the lower electrode. An upper electrode is disposed on the polycrystalline metal oxide layer.

Selector device comprising polycrystalline metal oxide layer and cross-point memory comprising same

A video-learning monitoring device () includes: a communication unit () for receiving studying video of a student captured by means of a user terminal (); and a score calculation unit () for calculating self-directed learning scores of the student on the basis of the studying video received by means of the communication unit ().

Video-learning monitoring device and method therefor

Disclosed is an operation method of a neural network element using a Hall voltage. The neural network element has a hole pattern portion, and the hole pattern portion has a cross shape. When a pulse current is applied, horizontal magnetic anisotropy is formed in a ferromagnetic layer by means of spin-orbit torque, and when an external magnetic field in a direction perpendicular to the pulse current is applied, the inversion of magnetization occurs by means of additional torque. The movement of a magnetic domain wall is performed by the inversion of magnetization, spin electrons applied thereby are scattered, and a Hall voltage is generated according to the anomalous Hall effect. The generated Hall voltage increases according to the number of applications of the pulse current or pulse voltage.

Operation method of neural network element using spin-orbit torque

Disclosed is logic device using spin orbit torque. Two magnetic tunnel junctions have mutually opposite magnetization directions. The direction of the current flowing through the non-magnetic metal layer acts as an input, and the resistance states of the magnetic tunnel junctions are determined by the input program currents. Various logic devices are implemented by a method of setting the input program current to a logic high or a logic low.

Logic element using spin-orbit torque and magnetic tunnel junction structure

A magnetic tunnel junction device and an operating method thereof are disclosed. The magnetization switching of a free layer may be induced through spin orbit torque or spin transfer torque, and a magnetization direction of a pinned layer may be easily set according to the intention of a designer through ferromagnetic coupling and antiferromagnetic coupling.

Magnetic tunnel junction device and operating method therefor

Disclosed are a synthetic antiferromagnetic material using the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction and a multibit memory using the synthetic antiferromagnetic material that is formed. The synthetic antiferromagnetic material has a non-magnetic metal layer as an RKKY inducing layer in the center, interaction between upper and lower ferromagnetic layers is imparted according to the thickness of the RKKY inducing layer, and the magnetization of an anti-parallel state is maximized therebetween. When such synthetic antiferromagnetic materials are cumulatively stacked and tunnel barrier layers are provided therebetween, multiple bits can be stored. Namely, data may be stored by supplying a program current in parallel to the surface of the RKKY inducing layer, and a resistance state may be checked by supplying current in a vertical direction to the surface of the RKKY inducing layer.

Synthetic antiferromagnetic material and multibit memory using same

Disclosed is a method of fabricating a resistive switching memory. A method of fabricating a resistive switching memory according to an embodiment of the present invention includes a step of forming a lower electrode on a substrate; a step of forming a resistive switching layer on the lower electrode using sputtering; and a step of forming an upper electrode on the resistive switching layer, wherein, in the step of forming a resistive switching layer on the lower electrode using sputtering, the substrate is disposed in a region, which is not reached by plasma generated by the first and second targets, between the first target and the second target disposed above the substrate to deposit the resistive switching layer.

Resistive switching memory including resistive switching layer fabricated using sputtering and method of fabricating the same

Disclosed are a switching atomic transistor with a diffusion barrier layer and a method of operating the same. By introducing a diffusion barrier layer in an intermediate layer having a resistance change characteristic, it is possible to minimize variation in the entire number of ions in the intermediate layer involved in operation of the switching atomic transistor or to eliminate the variation to maintain stable operation of the switching atomic transistor. In addition, it is possible to stably implement a multi-level cell of a switching atomic transistor capable of storing more information without increasing the number of memory cells. Also, disclosed are a vertical atomic transistor with a diffusion barrier layer and a method of operating the same. By producing an ion channel layer in a vertical structure, it is possible to significantly increase transistor integration.

Switching atomic transistor and method for operating same

A three-axis magnetic sensor which is not physically separated from each other and made of one element is provided. A spin-orbit torque is generated through an interface junction between a magnetization seed layer and a magnetization free layer, and through this, a change in an in-plane magnetic field may be sensed in the form of current or voltage in the magnetization seed layer. Further, a tunneling insulating layer and a magnetization pinned layer are formed on the magnetization free layer. The formed structure induces a tunnel magneto-resistance phenomenon. Through this, a change in a magnetic field in a vertical direction is sensed.

Three-axis magnetic sensor having perpendicular magnetic anisotropy and in-plane magnetic anisotropy

A structure and operation method of a spin device using a magnetic domain wall movement by spin orbit torque are provided. It is possible to invert the magnetization of free layer of the device at a low value of current by using the spin orbital torque, and the structure of the device is simpler than that of the conventional CMOS. Further, a spin synapse device to which a free layer of multiaxial anisotropy is applied in addition to movement of a magnetic domain wall is provided. Since the magnetoresistance can be adjusted according to the angle of the pinned layer and the free layer, it is easy to apply multi-bit and it can be applied to artificial synapse technology.

Spin device, and operating method therefor and manufacturing method therefor

An MTJ structure having vertical magnetic anisotropy is provided. The MTJ structure having vertical magnetic anisotropy can comprise: a substrate; an artificial antiferromagnetic layer located on the substrate; a buffer layer located on the artificial antiferromagnetic layer, and including W or an alloy containing W; a first ferromagnetic layer located on the buffer layer, and having vertical magnetic anisotropy; a tunneling barrier layer located on the first ferromagnetic layer; and a second ferromagnetic layer located on the tunneling barrier layer, and having vertical magnetic anisotropy. Accordingly, in the application of bonding the artificial antiferromagnetic layer with a CoFeB/MgO/CoFeB structure, the MTJ structure having improved thermal stability at high temperature can be provided by using the buffer layer therebetween.

MTJ structure having vertical magnetic anisotropy and magnetic element including the same

The present invention provides a phenothiazine derivative or a pharmaceutically acceptable salt thereof, a method of preparing a compound selected therefrom and a pharmaceutical composition containing the compound as an active ingredient. The phenothiazine derivative according to the present invention has an effect of inhibiting calmodulin (CaM; calcium-modulated protein) and thus helps cell death by maintaining the intracellular level of calcium in lung cancer cells at high concentration. Accordingly, the phenothiazine derivative according to the present invention can be usefully used to prevent or treat malignant tumors such as lung cancer.

Phenothiazine derivatives having CaM inhibitory activity

A lens is provided in an asymmetric shape including at least two curved surfaces with different light distribution angles. Therefore, uniformity ratio of illuminance and coefficient of utilization (CU) may be increased while reducing dazzle. When a lighting apparatus including the lens is used as a street light, light directly incident to a driver is minimized, thereby reducing dazzle to the driver. During a night drive, brightness at a far forward position of the driver may be increased. In addition, light emitted toward a street may be increased while reducing light emitted toward a sidewalk. As a result, uniformity ratio of illuminance and coefficient of utilization (CU) may be increased. Also, light pollution may be reduced.

Growing community of inventors

Seoul, South Korea

Jin Pyo Hong