Samsung Electro-mechanics Co., Ltd.

Jin O Yoo

Taek Jung Lee

Young Ghyu Ahn

Hwi Dae Kim

Won Chul Sim

Beom Seock Oh

Kyung Mi Bae

A multilayer ceramic capacitor includes: a body including a dielectric layer and first and second internal electrodes alternately disposed with the dielectric layer interposed therebetween; and a first external electrode and a second external electrode disposed externally on the body, the first external electrode being connected to the first internal electrode and the second external electrode being connected to the second internal electrode, wherein the first and second external electrodes are disposed on the body, and includes a first electrode layer including Ni and Cr, a second electrode layer disposed on the first electrode layer, and including Cu, and a plating layer disposed on the second electrode layer.

Multilayer ceramic capacitor

A multilayer capacitor includes a body including a dielectric layer and first and second internal electrodes stacked on each other and having the dielectric layer interposed therebetween; a pair of first external electrodes respectively disposed on first and second corners of the body, which are not adjacent to each other, and connected to the first internal electrode; a pair of second external electrodes respectively disposed on third and fourth corners of the body, which are not adjacent to each other, and connected to the second internal electrode; and a reinforcing portion disposed on a surface of the body, not covered by at least one of the first and second external electrodes, and including a sintered ceramic body.

Multilayer capacitor

There are provided a semiconductor package and a method of manufacturing the same. The semiconductor package includes: a substrate having a ground electrode formed on one surface thereof; at least one electronic component mounted on one surface of the substrate; an insulation layer including an exposed part exposing the ground electrode and a cover part covering the electronic component; and a shielding layer electrically connected to the ground electrode and covering the insulation layer.

Semiconductor package and method of manufacturing the same

A method of manufacturing a package may include forming a package module by disposing a plurality of components on an insulating plate filled with a viscous insulating liquid and curing the viscous insulating liquid, exposing at least portions of terminals of the plurality of components by polishing the insulating plate to have a predetermined thickness and then etching at least one portion of the insulating plate, forming a conductive stud on the at least exposed portions of the terminals and cutting the package module into predetermined unit packages, and examining reliability of a printed circuit board and bonding the unit package to the printed circuit board having confirmed reliability using the conductive stud.

Package and method of manufacturing package thereof

There is provided a semiconductor package module capable of minimizing a thickness of the module in spite of including an electronic element having a large size. The semiconductor package module includes: a semiconductor package having a shield formed on an outer surface and a side thereof and at least one receiving part provided in a lower surface thereof, the receiving part having a groove shape; and a main substrate having at least one large element and the semiconductor package mounted on one surface thereof, wherein the large element is received in the receiving part of the semiconductor package and is mounted on the main substrate.

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Gyunggi-do, South Korea

Jin O Yoo