Samsung Electronics Co., Ltd.

Jin-Nam Kim

Dong-Won Chun

Ji-Yeun Yoon

Chol-Ho Hwang

Nae-in Lee

Byung-Hee Kim

Rak-Hwan Kim

Eun-Ji Jung

Jong-Jin Lee

Sung-Kyung Lee

Jong-Min Baek

Chang-Hwan Hwang

Hyun-Seop Kim

Gee-Hong Yoon

Sang-Hoon Ahn

Jung-Ah Choi

Ho-Yun Jeon

Eui-Ju Lee

Tsukasa Matsuda

Chang-hwan Hwang

Min-Sung Kim

Kang-Doo Kim

Jae-Won Chang

Jung-Hee Lee

Jung-Eun Park

Jeong-hoon Kang

Jae-Won Hwang

Jeong-Ok Cha

Jung-Ha Hwang

Dae-Uk Kang

Kwan-Woo Hong

Wan-Soo Park

Stacking kit

A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a first interlayer insulating layer including a first trench, on a substrate a first liner layer formed along a side wall and a bottom surface of the first trench and including noble metal, the noble metal belonging to one of a fifth period and a sixth period of a periodic chart that follows numbering of International Union of Pure and Applied Chemistry (IUPAC) and belonging to one of eighth to tenth groups of the periodic chart, and a first metal wire filling the first trench on the first liner layer, a top surface of the first metal wire having a convex shape toward a bottom surface of the first trench.

Semiconductor device having a trench with a convexed shaped metal wire formed therein

Semiconductor devices may include a diffusion prevention insulation pattern, a plurality of conductive patterns, a barrier layer, and an insulating interlayer. The diffusion prevention insulation pattern may be formed on a substrate, and may include a plurality of protrusions protruding upwardly therefrom. Each of the conductive patterns may be formed on each of the protrusions of the diffusion prevention insulation pattern, and may have a sidewall inclined by an angle in a range of about 80 degrees to about 135 degrees to a top surface of the substrate. The barrier layer may cover a top surface and the sidewall of each if the conductive patterns. The insulating interlayer may be formed on the diffusion prevention insulation pattern and the barrier layer, and may have an air gap between neighboring ones of the conductive patterns.

Semiconductor devices

Washing machine

Paddle lighter for washing machine

Pulsator for washing machine

Drum for washing machine

A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes an interlayer insulating film, a first trench having a first width, and a second trench having a second width, the second trench including an upper portion and a lower portion, the second width being greater than the first width, a first wire substantially filling the first trench and including a first metal, and a second wire substantially filling the second trench and including a lower wire and an upper wire, the lower wire substantially filling a lower portion of the second trench and including the first metal, and the upper wire substantially filling an upper portion of the second trench and including a second metal different from the first metal.

Semiconductor device and method of fabricating the same

In a method of forming a wiring structure, a lower structure is formed on a substrate. An insulating interlayer is formed on the lower structure. The insulating interlayer is partially removed to form at least one via hole and a dummy via hole. An upper portion of the insulating interlayer is partially removed to form a trench connecting the via hole and the dummy via hole. A first metal layer filling the via hole and the dummy via hole is formed. A second metal layer filling the trench is formed on the first metal layer.

Methods of forming wiring structures including a plurality of metal layers

Detergent container for washing machine

Growing community of inventors

Seoul, South Korea

Jin-Nam Kim