Lg Display Co., Ltd.

Lg Philips Lcd Co., Inc.

Jin-Mo Yoon

Dae-Gyu Moon

Bu-Yeol Lee

In-Yeong Kong

A gate-in-panel type liquid crystal display device includes first and second substrates spaced apart from and facing each other, the first and second substrates including a display area and a non-display area; gate lines, data lines, thin film transistors and pixel electrodes in the display area on the first substrate, the gate lines and the data lines crossing each other to define pixel regions, the thin film transistors connected to the gate lines and the data lines, the pixel electrodes connected to the thin film transistors; gate pads and data pads in the non-display area on the first substrate, the gate pads and the data pads receiving direct current (DC) signals and alternating current (AC) signals; gate link lines connected to the gate pads and including first gate link lines and second gate link lines, the first gate link lines transmitting the DC signals and disposed to be adjacent to and parallel to each other, the second gate link lines transmitting the AC signals and disposed to be adjacent to and parallel to each other; connection lines connected to the gate link lines; gate circuit blocks connected to the connection lines, the gate circuit blocks generating gate signals using the DC signals and the AC signals and providing the gate signals to the gate lines; and a seal pattern between the first and second substrates and overlapping the gate link lines.

Liquid crystal display device and method of manufacturing the same

A liquid crystal display device and fabrication method is provided. The liquid crystal display device includes first and second substrates facing each other and a liquid crystal layer between the first and second substrates. Gate and data lines disposed on the first substrate cross each other to define a pixel region. A first protrusion extends from the gate line at a crossing of the gate line and the data line. A second protrusion extends from the data line at the crossing of the gate line and the data line. A thin film transistor is connected to the gate line and the data line. A pixel electrode in the pixel region is connected to the thin film transistor.

Liquid crystal display device and method of fabricating the same

A liquid crystal display device and method for driving the same are provided. A liquid crystal display device includes a driving circuit that includes a data driver that is inputted with a m-bit data signal. The data driver is operative to extract a n-bit data signal from the m-bit data signal and a (m-n)-bit data signal, and adjust a gray level of the (m-n)-bit data signal using the n-bit data signal. A liquid crystal panel includes a pixel that is supplied with the (m-n)-bit data signal during a plurality of frames.

Liquid crystal display device and method for driving the same

A mask and its application in sequential lateral solidification (SLS) crystallization of amorphous silicon. The mask includes a light absorptive portion that blocks a laser beam and a plurality of tier-shaped light-transmitting portions that pass a laser beam. Each light-transmitting portion has a plurality of adjacent rectangular sub-portions. Adjacent rectangular sub-portions form a step. In operation, the mask moves transversely relative to a amorphous silicon film while a laser performs SLS crystallization. The light portions control grain growth such that high quality polycrystalline silicon is formed.

Method of crystallizing amorphous silicon

The present invention relates to a thin film transistor and a fabricating method thereof which improve device characteristics by forming a substance layer such as a vacuum layer or an air layer, which has a remarkable characteristic of insulation, on an active layer. The present invention includes an insulated substrate, an active layer on the insulated substrate wherein the active layer has a source region, a channel region and a drain region, a gate insulating layer having an inner space on the channel region, and a gate electrode on the gate insulating layer over the channel region. And, the present invention includes the steps of forming an active layer on an insulated substrate, forming a gate insulating layer having an inner space on the active layer, forming a gate electrode on the gate insulating layer, and forming a source region and a drain region in the active layer by doping the substrate including the active layer with impurities.

Growing community of inventors

Seoul, South Korea

Jin-Mo Yoon