Coway Co., Ltd

Samsung Electronics Co., Ltd.

Virginia Tech Intellectual Properties, Inc.

Center for Innovative Technology

Virginia Polytechnic and State University

Jin-Min Kim

Sang-Woo Kang

Jun-Hyoung Bae

Sung-Yong Cho

Chan-Kyung Kim

Young-Nam Hwang

Jong-Cheol Kim

Sang-Hyeon Kang

Robert E Swanson

Jong-ho Park

Sang-Kil Lee

Jesse J Brown

Soon-Young Kim

Yo-han Choi

Hae-Young Jeong

Tingkai Li

Deidre A Hirschfeld

Ji-sang Kim

Jae-Hong Min

Jeong-Yun Lee

Byong-Hyoek Lee

Hyun-Jun Yun

Young-Hwa No

Sang-Joon Yoon

Yaping Yang

Dean-Mo Liu

Steven Van Aken

The tube-shaped pleated filter member may comprise: a filter body having a tube shape such that a filter medium is pleated and is wound; and a support unit. The filter body may comprise outer pleated portions corresponding to the outside of the tube shape, and inner pleated portions corresponding to the inside of the tube shape. An inner virtual line connecting corners of the inner pleated portions may have the shape in which a unit wave shape recessed in the outward direction is repeated. Assuming, that the thickness at a part having the maximum distance between the inner virtual line and the outer virtual line is a first thickness (T), the first thickness (T) may have a range defined by [equation 1] with regard to the diameter (D) of the outer virtual line./15≤1≤/6.  [Equation 1]

Tube-shaped pleated filter member

The present invention provides an air purifier. The air purifier according to one preferred embodiment, of the present invention may comprise: a housing; a blowing unit installed in the housing so as to draw in external air; and a filter unit having filtering surfaces, through which the air passes and which are disposed in multiple directions, and an air inflow space, which has at least a part thereof surrounded by the filtering surfaces disposed in the multiple directions and into which the air discharged from, the blowing unit flows.

Air purifier with hinged filter frame

Provided is a memory device that includes a memory bank including a plurality of memory cells arranged in a region where a plurality of word lines and a plurality of bit lines of the memory device intersect each other, a sense amplifier configured to amplify a signal transmitted through selected bit lines among the plurality of bit lines, and an arithmetic circuit configured to receive a first operand from the sense amplifier, receive a second operand from outside the memory device, and perform an arithmetic operation by using the first operand and the second operand, based on an internal arithmetic control signal generated in the memory device.

Memory device including arithmetic circuit and neural network system including the same

The present invention provides an air purifier. The air purifier according to one preferred embodiment of the present invention may comprise: a housing; a blowing unit installed in the housing so as to draw in external air; and a filter unit having filtering surfaces, through which the air passes and which are disposed in multiple directions, and an air inflow space, which has at least a part thereof surrounded by the filtering surfaces disposed in the multiple directions and into which the air discharged from the blowing unit flows.

A method, an apparatus, and a computer-readable medium to reduce power consumption of a wireless network device, the method including: receiving a packet; and determining whether to transmit the received packet to a host based on a state of the host and a packet transmission standard set for the host. Accordingly, it is possible to extend a period of use of a wireless portable terminal using an Internet protocol (IP)-based wireless network.

Method, apparatus and computer readable medium for reducing power-consumption of wireless network device

A plasma etching chamber of a plasma etching apparatus used in an etching process for manufacturing a photomask and a method for manufacturing a photomask using the same. The plasma etching chamber includes an electrode having a supporting surface for supporting a photomask substrate and a top surface surrounding the supporting surface, a heat transfer element installed along a peripheral edge of the supporting surface, and a heater for supplying heat to the heat transfer element. In the method for manufacturing a photomask, a shading layer is formed on a transparent substrate. A photoresist layer pattern is formed on the shading layer to partially expose the shading layer. The shading layer is etched to form a shading layer pattern, using plasma with the photoresist layer pattern as an etching mask, under a state in which the temperature of at least one portion of the peripheral edge of the transparent substrate is maintained higher than a temperature at a center of the transparent substrate.

Plasma etching chamber and method for manufacturing photomask using the same

A three-step method is used to repair an opaque defect in a photomask having a transparent substrate, and a light transmission portion disposed on the substrate and defining an opening the image of which is to be transferred to a layer on a semiconductor substrate. First, the thickness of the opaque defect is reduced by etching away only some of the defect. Second, a correction film is selectively formed over the entire surface of the substrate of the photomask in the opening defined by the light transmission portion with the exception of the region occupied by the pre-etched defect. Next, the correction film and the pre-etched defect are simultaneously etched away.

Method of repairing an opaque defect in a photomask

Compositions having the general formula (Ca.sub.x Mg.sub.1-x)Zr.sub.4 (PO.sub.4).sub.6 where x is between 0.5 and 0.99 are produced by solid state and sol-gel processes. In a preferred embodiment, when x is between 0.5 and 0.8, the MgCZP materials have near-zero coefficients of thermal expansion. The MgCZPs of the present invention also show unusually low thermal conductivities, and are stable at high temperatures. Macrostructures formed from MgCZP are useful in a wide variety of high-temperature applications. In a preferred process, calcium, magnesium, and zirconium nitrate solutions have their pH adjusted to between 7 and 9 either before or after the addition of ammonium dihydrogen phosphate. After dehydration to a gel, and calcination at temperatures in excess of 850.degree. C. for approximately 16 hours, single phase crystalline MgCZP powders with particle sizes ranging from approximately 20 nm to 50 nm result. The MgCZP powders are then sintered at temperatures ranging from 1200.degree. C. to 1350.degree. C. to form solid macrostructures with near-zero bulk coefficients of thermal expansion and low thermal conductivities. Porous macrostructures of the MgCZP powders of the present invention are also formed by combination with a polymeric powder and a binding agent, and sintering at high temperatures. The porosity of the resulting macrostructures can be adjusted by varying the particle size of the polymeric powder used.

Ceramic materials with low thermal conductivity and low coefficients of

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Seoul, South Korea

Jin-Min Kim