Richtek Technology Corporation, R.o.c

Richtek Technology Corporation

Jin-Lian Su

Jian-Hsing Lee

Tsung-Yi Huang

Hung-Der Su

Huan-Ping Chu

Tzu-Cheng Kao

The present invention discloses a double diffused metal oxide semiconductor (DMOS) device and a manufacturing method thereof. The DMOS device includes: a first conductive type substrate, a second conductive type high voltage well, a gate, a first conductive type body region, a second conductive type source, a second conductive type drain, a first conductive type body electrode, and a first conductive type floating region. The floating region is formed in the body region, which is electrically floating and is electrically isolated from the source and the gate, such that the electrostatic discharge (ESD) effect is mitigated.

Double diffused metal oxide semiconductor device and manufacturing method thereof

The present invention discloses a transient voltage suppressor (TVS) circuit, and a diode device therefor and a manufacturing method thereof. The TVS circuit is for coupling to a protected circuit to limit amplitude of a transient voltage which is inputted to the protected circuit. The TVS circuit includes a suppressor device and at least a diode device. The diode device is formed in a substrate, which includes: a well formed in the substrate; a separation region formed beneath the upper surface; a anode region and a cathode region, which are formed at two sides of the separation region beneath the upper surface respectively, wherein the anode region and the cathode region are separated by the separation region; and a buried layer, which is formed in the substrate below the well with a higher impurity density and a same conductive type as the well.

Transient voltage suppressor circuit, and diode device therefor and manufacturing method thereof

Growing community of inventors

Kaohsiung, Taiwan

Jin-Lian Su