Lg Innotek Co., Ltd.

Eutilex Co., Ltd.

Suzhou Lekin Semiconductor Co., Ltd.

Jin Kyung Choi

Sang Youl Lee

Seung Hyun Lee

Byoung S Kwon

Sung Ho Jung

Hyun Tae Son

Sun Woo Im

Young Ho Kim

Jae Won Seo

Hye Jeong Kim

Kwang Hee Kim

Eun Hye Yoo

Hyeok-Jun Park

Ji Won Chung

Young Gyoon Chang

Bo Rim Yi

Jung Yun Lee

Sunhee Hwang

Joongwon Lee

Jong Hyun Kim

Youn Joon Sung

Woo Sik Lim

Hoe Jun Kim

Jun Hee Hong

The present invention relates to an antigen-binding molecule comprising a heavy chain variable region comprising a heavy-chain complementarity-determining region 1 (HCDR1) comprising an amino acid sequence represented by Sequence No. 1, an HCDR2 comprising an amino acid sequence represented by Sequence No. 2, and an HCDR3 comprising an amino acid sequence represented by Sequence No. 3; a light-chain variable region comprising a light-chain complementarity-determining region 1 (LCDR1) comprising an amino acid sequence represented by Sequence No. 4, an LCDR2 comprising an amino acid sequence represented by Sequence No. 5, and an LCDR3 comprising an amino acid sequence represented by Sequence No. 6; wherein the antigen-binding molecule is a T cell receptor (TCR); and to a cell line expressing the same.

Chimeric antigen receptor that binds HLA-DR and CAR-T cell

It is to be understood that while the invention has been described in conjunction with the detailed description thereof, the foregoing description is intended to illustrate and not limit the scope of the invention, which is defined by the scope of the appended claims. Other aspects, advantages, and modifications are within the scope of the following claims.

Anti-human VSIG4 antibodies and uses thereof

An embodiment provides a semiconductor device including a light-emitting structure including a plurality of light-emitting portions disposed at a side and a plurality of second light-emitting portions disposed at another side, a plurality of first connection electrodes configured to electrically connect the plurality of first light-emitting portions, a plurality of second connection electrodes configured to electrically connect the plurality of second light-emitting portions, a first pad disposed on the plurality of first light-emitting portions, and a second pad disposed on the plurality of second light-emitting portions. The first pad includes a plurality of 1-2 pads extending toward the second pad. The second pad includes a plurality of 2-2 pads extending toward the first pad. The first connection electrode includes a region between the plurality of 1-2 pads in a thickness direction of the light-emitting structure. The second connection electrode includes a region between the plurality of 2-2 pads in the thickness direction of the light-emitting structure.

Semiconductor device having a first pad not overlapping first connection electrodes and a second pad not overlapping second connection electrodes in a thickness direction

Provided are antibodies and antigen-binding fragment thereof that bind to VSIG4. Various in vitro and in vivo methods and compositions related to antibodies. Methods include prevention and/or therapeutic treatment of cancer using an antibody or an antigen-binding fragment that binds to VSIG4.

A light emitting device includes a substrate; a light emitting structure disposed on the substrate; a first insulation layer disposed on the light emitting structure; a second insulation layer disposed on the first insulation layer; a first electrode and a second electrode electrically connected to the light emitting structure; a first pad electrically connected to the first electrode; and a second pad electrically connected to the second electrode.

Light emitting device, light emitting device package including the device, and lighting apparatus including the package

A light emitting device includes a sapphire substrate; a light emitting structure disposed on the sapphire substrate, and including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; a first electrode electrically connected to the first conductivity type semiconductor layer; a second electrode electrically connected to the second conductivity type semiconductor layer; a first bonding pad electrically connected to the first electrode; a second bonding pad electrically connected to the second electrode; a first insulation layer disposed on the light emitting structure; and a second insulation layer disposed between the second electrode and the second bonding pad.

A light emitting device package according to an embodiment comprises: a light emitting device comprising a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; first and second lead frames disposed to be spaced apart from each other; first and second solder portions disposed on the first and second lead frames, respectively; and first and second pads disposed between the first and second solder portions and the first and second conductive semiconductor layers, respectively, wherein at least one of the first or second pad comprises at least one of a rounding portion and a chamfer portion, wherein the first pad comprises a first-first edge and a first-second edge being positioned farther than the first-first edge from the center of the light emitting device, wherein the second pad comprises a second-first edge and a second-second edge being positioned farther than the second-first edge from the center of the light emitting device, and wherein the rounding portion or the chamfer portion is positioned at at least one of the first-second edge or the second-second edge.

Light emitting device package and light emitting device comprising same

A light emitting device of an embodiment includes a substrate, a light emitting structure disposed under the substrate, the light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, first and second electrodes respectively connected to the first and second conductive semiconductor layers, a metal reflecting layer disposed under the light emitting structure, and a first insulating layers disposed between the first electrode and the light emitting structure, between the first electrode and the second electrode, and between the first electrode and the metal reflecting layer, wherein the metal reflecting layer includes a first segment overlapped with the second electrode in a thickness direction of the light emitting structure and a second segment disposed with extending from the first segment.

A light emitting device and a light emitting device package are provided. The light emitting device may include a substrate, a light emitting structure provided under the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a first insulating layer configured to expose the second conductive semiconductor layer and provided on a lower edge of the light emitting structure, a first light permeable electrode layer provided under the second conductive semiconductor layer exposed by the first insulating layer, a second light permeable electrode layer provided under the first insulating layer and the first light permeable electrode layer, and a reflective layer provided under the second light permeable electrode layer.

Growing community of inventors

Seoul, South Korea

Jin Kyung Choi