Samsung Electronics Co., Ltd.

Industry-university Cooperation Foundation Hanyang University

Jin-kyu Kim

Kyoung-Il Bang

Song-Ho Yoon

Hyung-gyu Lee

Song-ho Yoon

Min-young Kim

Nam-Yoon Woo

Kwang-yoon Lee

Jin-Soo Kim

Sun-Young Park

Young-woo Park

Chan-Ik Park

Woon-Jae Chung

Ji-Hyun In

Eok-soo Shim

Jeong-Beom Seo

Jeong-eun Kim

Jang-hwan Kim

Min-Wook Jung

Kyu-ho Park

Jae-hyuck Yoo

Kyoung-il Bang

Hyun-Bean Yi

Jae-Hoon Song

Pil-Jae Min

Sung-Ju Park

Jeong-uk Kang

Kyoung-Il 337-302 Cheongmyeong Maeul Bang

A non-volatile mass storage memory and an input/output processing method using the memory are provided. The memory device includes a storage unit including a non-volatile random access memory and a flash memory and a controller to control the storage to process an input/output request. Accordingly, system memories having different purposes and functionalities, such as a flash memory and a dynamic random access memory (DRAM), may be integrated with each other.

Complex memory device and I/O processing method using the same

A data processing device for a storage device can include a dictionary storage unit that is configured to store a plurality of dictionaries and a compression unit that is configured to determine a selected dictionary from the plurality of dictionaries based on received data, and compress the received data using the selected dictionary to provide compressed data. Each of the plurality of dictionaries can include a plurality of pattern-symbol correspondence relations defining a one-to-one correspondence between respective ones of a plurality of patterns and respective ones of a plurality of symbols.

Storage device and data processing device utilizing determined dictionary compression

An apparatus and method for reorganizing mapping information in a flash memory are provided. The apparatus includes a sector-managing module that secures a mapping sector where mapping information is recorded in a physical unit, and determines whether user data is recorded up to a sector located in a predetermined position, and a mapping-information-recording module that records the mapping information in the mapping sector according to a result of the determination. Here, the mapping information includes a relation of a physical sector storing the user data and a logical sector corresponding to the physical sector.

Apparatus and method for reorganization of mapping information in flash memory

A solid state drive (SSD) including a storage that includes a plurality of flash memories configured to be independently drivable and a controller to receive an input/output (I/O) request from a host, to split the I/O request into a plurality of sub-requests each having a size configured to be capable of being processed independently by each flash memory, and to process the I/O request based on the sub-requests.

Method of handling I/O request and solid state drive using the same

Present invention relates to a mapping apparatus and method for a non-volatile memory supporting different cell types, and more particularly, to a mapping apparatus and method for a non-volatile memory supporting different cell types capable of mapping a logical address to a physical address in the non-volatile memory supporting different cell types in which bits represented by unit cells are different from each other. A mapping apparatus for a non-volatile memory supporting different cell types according to an embodiment of the invention includes: a user request unit used for a user to request a predetermined operation by using a logical address; a non-volatile memory comprising a plurality of memory areas having different cell types; and a mapping management unit determining a physical address to be mapped to the logical address of one of the plurality of memory areas on the basis of the logical address used for the requested operation.

Mapping apparatus and method for non-volatile memory supporting different cell types

A data management system includes a data processor configured to provide a file system module configured to store first data in a flash memory in block units and a filter layer module configured to receive second data from the file system module and to store the second data in a phase-change random access memory (PRAM) in sub-block units. The filter layer module may be configured to identify difference data in the second data received from the file system module by comparing the received second data and third data stored in the PRAM, and to write the identified difference data to the PRAM. The second data may include file metadata and the first data may include data other than file metadata. The sub-block units may be byte units.

Data management systems, methods and computer program products using a phase-change random access memory for selective data maintenance

An memory device including a data region storing a main data, a first index region storing a count data, and a second index region storing an inverted count data, where the data region, the first index region, and the second index region are included in one logical address.

Apparatus and method for processing data of flash memory

A memory system includes a variable resistance memory configured to input and output data by a first unit and a translation layer for managing the degree of wear of the variable resistance memory by a second unit, different from the first unit.

Memory system and wear leveling method thereof

An apparatus for providing atomicity with respect to a request of a write operation for successive sectors in a flash memory is provided. The apparatus includes a data write module writing data in a main sector of a page and allocating status bits indicating a status of the data write to a spare sector of the page, a write progress managing module overwriting a commit mark in the spare sector allocated with the status bits according to a progress status of the data write, and a validity determining module determining validity of the sectors on the basis of the overwritten commit mark and providing information of the successive sectors.

Apparatus and method for providing atomicity with respect to request of write operation for successive sector

Provided are an apparatus and method for processing data of flash memory. The apparatus includes a user requesting unit to request a data operation using a predetermined logical address, a transformation unit to transform the logical address into a physical address, and a control unit to record count data counting the number of predetermined bits of data, in an index region to indicate whether the data is valid when conducting the data operation.

A nonvolatile-memory-management includes a generation unit that generates a free block list by arranging an entry including representative information of a group, of which free blocks adjacent to each other are grouped according to predetermined criteria, according to key values where the representative information are combined, a determination unit that determines parameters according to characteristics of data to be recorded, and a block-allocating unit that allocates free blocks satisfying the parameters as an area to be recorded with the data by referring to the free block list.

Apparatus and method for managing nonvolatile memory

Provided is an apparatus and method for managing mapping information of a nonvolatile memory, in which a time period required for a request for access to a logic sector of the nonvolatile memory is minimized. The apparatus includes an extractor which extracts a logical sector mapped with each physical sector in physical units mapped with a predetermined logical unit, a mapping information generator which generates mapping information of logical sectors belonging to the logical unit including the extracted logical sector, and a mapping information memory which stores the generated mapping information.

Apparatus and method for managing mapping information of nonvolatile memory

An apparatus includes a nonvolatile memory including a plurality of memory cells, each configured to store data having at least two bits and a control circuit configured to write data to a first memory cell connected to a wordline of the nonvolatile memory and to then write data to a second memory cell that is connected to wordline and shares a bit buffer with the first memory cell.

Multi-level cell memory devices and methods using sequential writing of pages to cells sharing bit buffers

A method and apparatus for writing data to and reading data from a phase-change random access memory (PRAM) include encoding original data using a predetermined encoding function, selecting data, from among the original data and the encoded data, which require less power when being written to the PRAM, writing the selected data to the PRAM, generating marking information related to the selected data, and writing the marking information to the PRAM. Therefore, power consumption can be reduced when data are written to the PRAM.

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Seoul, South Korea

Jin-kyu Kim