Lg Electronics Inc.

Lg Innotek Co., Ltd.

Jin Kyoung Yoo

Hyun Kyong Cho

Jong Wook Kim

Sung Jin An

Gyu Chul Yi

Young Joon Hong

A light emitting device is disclosed. The light emitting device includes a conductive support layer; a reflective layer disposed on the conductive support layer; a nitride semiconductor layer disposed on the reflective layer. Furthermore, the nitride semiconductor layer includes a second-type semiconductor layer on the reflective layer, an active layer on the second-type semiconductor layer, and a first-type semiconductor layer on the active layer; a light extraction structure disposed on the first-type semiconductor layer; and a first-type electrode disposed on the light extraction structure.

Light emitting device and method of manufacturing the same

A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.

Growing community of inventors

Gyeongsangbuk-do, South Korea

Jin Kyoung Yoo