Mitsui Chemicals Tohcello, Inc.

Mitsui Chemicals Ict Materia, Inc.

Jin Kinoshita

Hiroyoshi Kurihara

Kouji Igarashi

Jun Kamada

Akimitsu Morimoto

Toru Miura

Takashi Unezaki

Hiroto Yasui

Noboru Kawasaki

Shinichi Usugi

Makoto Sukegawa

A back grinding adhesive film used to protect a surface of a wafer, the back grinding adhesive film including a base material layer, and an adhesive resin layer which is provided on one surface side of the base material layer and configured with an ultraviolet curable adhesive resin material. Here, regarding the ultraviolet curable adhesive resin material, when a storage elastic modulus at −15° C. is defined as E' (−15° C.) and a storage elastic modulus at 100° C. is defined as E′ (100° C.) in a case where a viscoelastic characteristic is measured, E′ (100° C.) is 1.0×10to 3.5×10Pa, and E′ (100° C.)/E′ (−15° C.) is 2.0×10to 1.5×10.

Back grinding adhesive film and method for manufacturing electronic device

A method for manufacturing an electronic device includes a step (A) of preparing a structure which includes a wafer including a circuit forming surface, and an adhesive film bonded to the circuit forming surface side of the wafer, a step (B) of back-grinding a surface of the wafer on a side opposite to the circuit forming surface side, and a step (C) of irradiating the adhesive film with an ultraviolet ray and then removing the adhesive film from the wafer. The adhesive film includes a base material layer, and an adhesive resin layer configured with an ultraviolet curable adhesive resin material. The ultraviolet curable adhesive resin material has a storage elastic modulus at 5° C. E' (5° C.) after curing of 2.0×10to 2.0×10Pa, and a storage elastic modulus at 100° C. E′ (100° C.) of 1.0×10to 3.0×10Pa.

Method for manufacturing electronic device

The method for manufacturing an electronic device includes at least: a step of preparing a structure provided with an adhesive film provided with a base material layer, an adhesive resin layer (A) provided on a first surface side of the base material layer and for temporarily fixing an electronic component, and an adhesive resin layer (B) provided on a second surface side of the base material layer and in which an adhesive force is decreased by an external stimulus, an electronic component attached to the adhesive resin layer (A) of the adhesive film, and a support substrate attached to the adhesive resin layer (B) of the adhesive film; at least one step selected from a step of decreasing water content in the adhesive film and a step of decreasing water content in the structure; and a step of sealing the electronic component with a sealing material.

An adhesive film includes a base material layer; an adhesive resin layer (A) provided on a first surface side of the base material layer; and an adhesive resin layer (B) provided on a second surface side of the base material layer and in which an adhesive force is decreased by an external stimulus, in which, as measured by method 1, an integrated tacking force value (F) of the adhesive resin layer (B) is 1.0 gf/sec or more at a test speed of 2.5 mm/min and a test temperature of 130&#xb0; C., and an integrated tacking force value (F) of the adhesive resin layer (B) is 7.0 gf/sec or more at a test speed of 30 mm/min and a test temperature of 130&#xb0; C.

Adhesive film and method for manufacturing electronic device

Provided is a method of producing an electronic device, including a step of preparing a structure which includes an electronic component having a circuit forming surface, and an adhesive laminated film which includes a base material layer, an unevenness-absorptive resin layer, and an adhesive resin layer in this order and in which the adhesive resin layer is attached to the circuit forming surface of the electronic component such that the circuit forming surface is protected; and a step of forming an electromagnetic wave-shielding layer on the electronic component in a state of being attached to the adhesive laminated film.

Method of producing electronic device

Provided is a method of producing an electronic device, including a step of preparing a structure which includes an electronic component having a circuit forming surface, and an adhesive laminated film which includes a base material layer and an adhesive resin layer and in which the adhesive resin layer is attached to the circuit forming surface of the electronic component; a step of back-grinding a surface of the electronic component opposite to the circuit forming surface in a state of being attached to the adhesive laminated film; a step of dicing the electronic component in a state of being attached to the adhesive laminated film; and a step of forming an electromagnetic wave-shielding layer on the separated electronic components in a state of being attached to the adhesive laminated film, in this order.

An adhesive film used when sealing an electronic component to temporarily fix the electronic component, the adhesive film including a base material layer, an adhesive resin layer which is provided on a first surface side of the base material layer and which is for temporarily fixing the electronic component, and an adhesive resin layer which is provided on a second surface side of the base material layer and of which the adhesive strength decreases according to an external stimulus, in which the adhesive resin layer includes a polyvalent carboxylic acid ester-based plasticizer and an adhesive resin, and a content of the polyvalent carboxylic acid ester-based plasticizer in the adhesive resin layer is more than or equal to 0.7 parts by mass and less than or equal to 50 parts by mass with respect to 100 parts by mass of the adhesive resin included in the adhesive resin layer.

Adhesive film having adhesive resin layers and method of manufacturing electronic apparatus using the adhesive film

This semiconductor wafer surface protection film has a substrate layer A, an adhesive absorption layer B, and adhesive surface layer C, in the stated order. The adhesive absorption layer B comprises an adhesive composition containing a thermoset resin b1, said adhesive absorption layer B having a minimum value G'bmin of the storage elastic modulus G&#x2032;b in the range of 25&#xb0; C. to less than 250&#xb0; C. of 0.001 MPa to less than 0.1 MPa, a storage elastic modulus G&#x2032;b250 at 250&#xb0; C. of 0.005 MPa or above, and a temperature at which G&#x2032;bmin is exhibited of 50-150&#xb0; C. The adhesive surface layer C has a minimum value G&#x2032;cmin of the storage elastic modulus G&#x2032;c in the range of 25&#xb0; C. to less than 250&#xb0; C. of 0.03 MPa.

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Nagoya, Japan

Jin Kinoshita