Samsung Electronics Co., Ltd.

Inha-industry Partnership Institute

Jin-joo Kim

Yong-hwa Park

Eun-Jung Lee

Sung-Nam Chang

Dae-Woong Kang

Suk-koo Hong

Chang-kwon Hwangbo

Gum-hye Jeon

Jeong-ho Mun

Kyong-Joo Lee

Yong-Ho Lee

Jang-woo You

Ji-deog Kim

Yong-jun Park

Jang-hoon Lee

Provided is a photoresist composition including a plasma light absorber and a method of manufacturing semiconductor devices using the same. The photoresist composition may include a developable polymer, a photoacid generator, a plasma light absorber, and an organic solvent. The plasma light absorber may be relatively transmissive to light used with a photolithographic patterning process (e.g., ultraviolet light) to pattern a layer formed with the photoresist composition and be relatively absorptive to light created in a subsequent etching process (such as light generated from a plasma). When forming a semiconductor device, a patterned photoresist layer may be more precisely generated and may better maintain is desired properties when used to etch various target layers of the semiconductor device.

Photoresist composition for deep ultraviolet light patterning method and method of manufacturing semiconductor device

Provided is a method of fabricating an integrated circuit device, the method including: forming, on a substrate, a developable bottom anti-reflective coating (DBARC) layer including a chemically amplified polymer; forming, on the DBARC layer, a photoresist layer including a non-chemically amplified resin and a photoacid generator (PAG); generating an acid from the PAG in a first region selected from the photoresist layer, by exposing the first region; diffusing the acid in the exposed first region into a first DBARC region of the DBARC layer, the first DBARC region facing the first region; and removing the first region and the first DBARC region by developing the photoresist layer and the DBARC layer.

Method of fabricating integrated circuit devices

A photonic crystal type light modulator is provided. The photonic crystal type light modulator includes: a substrate; a first electrode disposed on the substrate; an active layer disposed on the first electrode, where an optical characteristic of the active layer changes according to application of an electric field; a second electrode disposed on the active layer; and a photonic crystal layer disposed on the second electrode and comprising a 2D grating.

Photonic crystal type light modulator and 3D image acquisition apparatus employing the same

Provided are a high-speed optical modulator and a method of modulating light by using the same. The optical modulator includes first and second resonance cavities that are sequentially stacked on a transparent substrate, wherein the first and second resonance cavities each include an electric-optical layer. According to the method, first and second voltages having different sizes are simultaneously applied respectively to the first and second resonance cavities, and then for the other configuration of the modulator mutually interchanged voltages are applied.

High-speed optical modulator and method of modulating light by using the same

Semiconductor devices are provided. The semiconductor devices may include a plurality of gate structures disposed on a semiconductor substrate, each of the gate structures including a floating gate, an inter-gate dielectric layer, and a control gate. The semiconductor devices may also include liners on opposing sidewalls of adjacent ones of the gate structures. The liners may define a gap. A first width of the gap may be less than a second width of the gap.

Semiconductor devices comprising a plurality of gate structures

Semiconductor devices including a plurality of gate structures disposed on a semiconductor substrate are provided. Each of the gate structures includes a tunnel dielectric layer, a floating gate, an inter-gate dielectric layer, a control gate, and a mask layer. Liners cover opposing sidewalls of adjacent floating gates. Spacers are disposed on the liners, the spacers protruding from opposing sidewalls of adjacent ones of the gate structures, and a top of each of the spacers is disposed below a top of a corresponding one of the gate structures. The liners define sidewalls of respective air gaps and the spacers define tops of the respective air gaps.

Growing community of inventors

Seoul, South Korea

Jin-joo Kim