Industry-University Cooperation Foundation Hanyang University

Korea Institute of Science and Technology

Industrial Bank of Korea

Jin-Hyung Park

Jea-Gun Park

Jae-Hyung Lim

Jong-Young Cho

Hee-Sub Hwang

Ho Sam Choi

Myung Jong Kim

Un-gyu Paik

Sukang Bae

Jung Ho Kang

Ye-hwan Kim

Hee Won Seo

Hao Cui

Hyunjin Cho

Chan-Hyeong Kim

Sang Ook Kang

Changhyup Lee

Sungchan Park

Provided is a method for producing a high-quality boron nitride film grown by using a borazine oligomer as a precursor through a metal catalyst effect. The method solves the problems, such as control of a gaseous precursor and vapor pressure control, occurring in CVD (Chemical vapor deposition) according to the related art, and a high-quality hexagonal boron nitride film is obtained through a simple process at low cost. In addition, the hexagonal boron nitride film may be coated onto various structures and materials. Further, selective coating is allowed so as to carry out coating in a predetermined area and scale-up is also allowed. Therefore, the method may be useful for coating applications of composite materials and various materials.

Method for producing hexagonal boron nitride film using borazine oligomer as a precursor

Provided are a multi-selective polishing slurry composition and a semiconductor element production method using the same. A silicon film provided with element patterns is formed on the uppermost part of a substrate having a first region and a second region. The element pattern density on the first region is higher than the element pattern density on the second region. Formed in sequence on top of the element patterns are a first silicon oxide film, a silicon nitride film and a second silicon oxide film. The substrate is subjected to chemical-mechanical polishing until the silicon film is exposed, by using a polishing slurry composition containing a polishing agent, a silicon nitride film passivation agent and a silicon film passivation agent. The polishing slurry composition may be a mixture of 100 parts by weight of a polishing agent suspension, containing a polishing agent, and from 40 to 120 parts by weight of an additive solution, and the additive solution can contain 100 parts by weight of a solvent, from 0.01 to 5 parts by weight of a silicon nitride film passivation agent and from 0.01 to 5 parts by weight of a silicon film passivation agent.

Multi-selective polishing slurry composition and a semiconductor element production method using the same

The present invention relates to a CMP slurry composition for polishing tungsten comprising a abrasive and a polishing chemical, wherein the abrasive comprises colloidal silica dispersed in ultra-pure water, and the polishing chemical comprises hydrogen peroxide, ammonium persulfate and iron nitrate. The slurry composition is not discolored and has good etching selectivity, so as to be applied to a CMP process.

CMP slurry composition for tungsten

There are provided a gamma ray detecting apparatus, including: a secondary electron emitter causing a Compton scattering reaction with an incident gamma ray to emit secondary electrons in a progress direction of the gamma ray; a first radiation detector provided to be opposed to the secondary electron emitter with respect to an emission progress direction of the secondary electrons and detecting the position and transfer energy of the secondary electron; a second radiation detector provided to be opposed to the first radiation detector with respect to the emission progress direction of the secondary electron and detecting the position and the transfer energy of the secondary electron passing through the first radiation detector; a third radiation detector provided to be opposed to the second radiation detector with respect to the emission progress direction of the secondary electron and detecting residual energy of the secondary electron by absorbing the secondary electron passing through the second radiation detector; and a data processor having a coincidence circuit judging whether the secondary electrons simultaneously react in the first to third radiation detectors, and the data processor back traces trajectories of the secondary electrons detected by the first and second radiation detectors to detect the position of a ray source of the gamma ray, and a gamma ray detecting method.

Gamma ray detecting apparatus and method for detecting gamma ray using the same

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Seoul, South Korea

Jin-Hyung Park