Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Ubmaterials Inc.

Jin-Hyung Park

Byoung-Deog Choi

Hee-Young Park

Hong-Rae Kim

Kyung-Mun Byun

Sang-Ho Roh

In-Sun Hwang

Joo-Woan Cho

Byoung-Kwon Choo

Joon-Hwa Bae

In-kyun Shin

Byoung-Ho Cheong

Dong-Hoon Chung

Sung-min Huh

Jeong-Kyun Na

Won-Il Cho

A polishing slurry for silicon, a method of polishing polysilicon, and a method of manufacturing a thin film transistor substrate, the slurry including a polishing particle; a dispersing agent including an anionic polymer, a hydroxyl acid, or an amino acid; a stabilizing agent including an organic acid, the organic acid including a carboxyl group; a hydrophilic agent including a hydrophilic group and a hydrophobic group, and water, wherein the polishing particle is included in the polishing slurry in an amount of about 0.1% by weight to about 10% by weight, based on a total weight of the slurry, a weight ratio of the polishing particle and the dispersing agent is about 1:0.01 to about 1:0.2, a weight ratio of the polishing particle and the stabilizing agent is about 1:0.001 to about 1:0.1, and a weight ratio of the polishing particle and the hydrophilic agent is about 1:0.01 to about 1:3.

Polishing slurry for silicon, method of polishing polysilicon and method of manufacturing a thin film transistor substrate

Semiconductor devices including empty spaces and methods of forming the semiconductor devices are provided. The semiconductor devices may include first and second line structures extending in a direction on a substrate, an insulating isolation pattern between the first and second line structures and a conductive structure between the first and second line structures and next to the insulating isolation pattern along the direction. The semiconductor devices may also include an empty space including a first portion between the first line structure and the conductive structure and a second portion between the first line structure and the insulating isolation pattern. The first portion of the empty space may have a height different from a height of the second portion of the empty space.

Semiconductor devices including empty spaces

Semiconductor devices including empty spaces and methods of forming the same

A photomask ensures the transfer of a pattern having a uniform and desired CD onto a substrate from which an electronic device or the like is made. The photomask includes a transparent substrate, a light-shielding film on the front side of the substrate and defining a mask pattern of transmission regions dedicated for pattern formation, and an auxiliary pattern on the front side of the substrate that alters the intensity of the light beam passing through the substrate. After the mask pattern is formed, the photomask is tested to determine variations between the desired (target) CD and the CDs of the features of a pattern transcribed onto a test wafer using the photomask. A density function in which characteristics of the auxiliary pattern to be formed, e.g., the size, depth and/or pitch of recesses, is developed as a prediction of the intensity distribution of the light beam transmitted through the substrate once the auxiliary pattern is present at the front side of the substrate. The photomask is then repaired/corrected by designing and forming the auxiliary pattern according to the density function so as to prevent local or global variations between the desired CD and the actual CD from occurring.

Photomask and method of manufacturing the same

A reference pattern for creating a defect recognition level comprises a blank region formed on a transparent substrate and a grating region formed adjacent to the blank region, wherein the grating region includes a plurality of parallel trench lines.

Reference pattern for creating a defect recognition level, method of fabricating the same and method of inspecting defects using the same

A chromeless photomask includes a main pattern portion and a complementary pattern portion formed in the surface of the transparent mask substrate adjacent to an outer peripheral edge of the main pattern portion. The main and complementary pattern portions are each formed by recessing a surface of a transparent mask substrate to produce respective protrusions and recesses that induce a phase difference of 180 degrees in light rays passing therethrough. The complementary pattern portion is designed to produce interference that prevents distortion in the photoresist pattern formed at a region by and corresponding to the edge of the main pattern portion of the photomask. Accordingly, the present invention provides for a relatively large secondary mask alignment margin.

Chromeless photomask and exposure apparatus including the chromeless photomask

Growing community of inventors

Seongnam-si, South Korea

Jin-Hyung Park