Magnachip Semiconductor, Inc.

Sk Keyfoundry Inc.

Key Foundry Co., Ltd

Jin Hyung Kim

Sung Bum Park

Kee Sik Ahn

Ji Hye Jang

Sung Chun Kang

A multi time program device with a power switch and a non-volatile memory implementing the power switch for multi time program is provided. The device performs a program operation or an erase operation of a non-volatile memory cell in a non-volatile memory device.

Multi time program device with power switch and non-volatile memory

A negative voltage switching device includes a first switching circuit configured to transmit a first negative voltage, a second switching circuit configured to transmit a second negative voltage, and a switching selection circuit configured to select one of the first switching circuit or the second switching circuit for transmitting one of the first negative voltage and the second negative voltage to an output terminal.

Negative voltage switching device and non-volatile memory device using the same

The level shifter of an embodiment includes a first level shifter configured to output an intermediate signal wherein a high voltage is a positive supply voltage or a positive voltage by inputting an input signal and a low voltage is a negative supply voltage, to an intermediate signal node and an inverted intermediate signal node and a second level shifter configured to output a low voltage to an output terminal and an inverted output terminal by receiving input of the intermediate signal and altering the low voltage to the negative supply voltage or a negative voltage.

Growing community of inventors

Goyang-si, South Korea

Jin Hyung Kim