Electronics and Telecommunications Research Institute

Jin Hyuk Oh

Sang Hoon Kim

Gyungock Kim

Ki Seok Jang

In Gyoo Kim

Sun Ae Kim

Jiho Joo

Jaegyu Park

Sang Gi Kim

Yongseok Choi

Hyuk Je Kwon

Hyundai Park

Myung Joon Kwack

Myungjoon Kwack

Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.

Opto-electronic system including optical input/output device

Method of manufacturing optical input/output device

Provided is a photodetector including a substrate, a first doped region on the substrate, a second doped region having a ring structure, wherein the second doped region is provided in the substrate, surrounds the first doped region and is horizontally spaced apart from a side of the first doped region, an optical absorption layer on the first doped region, a contact layer on the optical absorption layer, a first electrode on the contact layer, and a second electrode on the second doped region.

Photodetector

Optical input/output device, optical electronic system including the same, and method of manufacturing the same

Provided is a silicon-wafer-based germanium semiconductor photodetector configured to be able to provide properties of high gain, high sensitivity, and high speed, at a relatively low voltage. A germanium-based carrier multiplication layer (e.g., a single germanium layer or a germanium and silicon superlattice layer) may be provided on a silicon wafer, and a germanium charge layer may be provided thereon, a germanium absorption layer may be provided on the charge layer, and a polysilicon second contact layer may be provided on the absorption layer. The absorption layer may be configured to include germanium quantum dots or wires.

Low-voltage high-gain high-speed germanium photo detector and method of fabricating the same

Growing community of inventors

Daejeon, South Korea

Jin Hyuk Oh