Oracle International Corporation

Ii-vi Delaware, Inc.

Finisar Corporation

Jin-Hyoung Lee

Ashok V Krishnamoorthy

Xuezhe Zheng

Shiyun Lin

Daniel Mahgerefteh

Ivan Shubin

Ying Luo

Bryan Park

Jock T Bovington

Bernd Huebner

Jin Yao

Kannan Raj

Daniel Y Lee

A system may include a wafer that includes ICs and defines cavities. Each cavity may be formed in a BEOL layer of the wafer and proximate a different IC. The system may also include an interposer that includes a transparent layer configured to permit optical signals to pass through. The interposer may also include at least one waveguide located proximate the transparent layer. The at least one waveguide may be configured to adiabatically couple at least one optical signal out of the multiple ICs. Further, the interposer may include a redirecting element optically coupled to the at least one the waveguide. The redirecting element may be located proximate the transparent layer and may be configured to receive the at least one optical signal from the at least one waveguide. The redirecting element may also be configured to vertically redirect the at least one optical signal towards the transparent layer.

Wafer level testing of optical components

A photonic system may include a PIC and an interposer. The PIC may include a first SiN waveguide. The interposer may include second and third SiN waveguides substantially vertically aligned with the first SiN waveguide in an overlap region of a first waveguide stack that may include the first, second, and third waveguides in the first waveguide stack. Within the overlap region, the second SiN waveguide may include vertical tapering that increases a thickness of the second SiN waveguide from an initial thickness to an increased thickness toward the first SiN waveguide. The first waveguide stack may further include a non-overlap region in which the interposer does not overlap the PIC. The non-overlap region may include the second and third SiN waveguides. Within the non-overlap region, the second SiN waveguide may maintain the increased thickness and the second and third SiN waveguides may include a first lateral bend.

Adiabatically coupled photonic system

An example system includes a grating coupled laser, a laser optical interposer (LOI), an optical isolator, and a light redirector. The grating coupled laser includes a laser cavity and a transmit grating optically coupled to the laser cavity. The transmit grating is configured to diffract light emitted by the laser cavity out of the grating coupled laser. The LOI includes an LOI waveguide with an input end and an output end. The optical isolator is positioned between the surface coupled edge emitting laser and the LOI. The light redirector is positioned to redirect the light, after the light passes through the optical isolator, into the LOI waveguide of the LOI.

Surface coupled laser and laser optical interposer

In one example embodiment, an optical circuit for optical modulation of light may include an input waveguide including a first thickness, an optical modulator including a second thickness, and a tapered transition that optically couples the optical modulator and the input waveguide. The second thickness may be smaller than the first thickness. The tapered transition may adiabatically transform the optical mode of the input waveguide to the optical modulator.

Vertical junction based silicon modulator

Adiabatically coupled photonic systems with fan-out interposer

In an example, a photonic system and method include a photonic integrated circuit (PIC) including a silicon (Si) waveguide and a first silicon nitride (SiN) waveguide. The system also includes an interposer including a second SiN waveguide including vertical tapers on the second SiN waveguide by increasing a thickness of the second SiN waveguide in a direction toward the first SiN waveguide to allow an adiabatic optical mode transfer and decreasing the thickness of the second SiN waveguide in a direction away from the first SiN waveguide to inhibit the optical mode transfer.

Adiabatically coupled photonic systems with vertically tapered waveguides

A polarization splitter rotator (PCR) can include a substrate, a primary through waveguide formed in the substrate having a custom tapered top region over a bottom region, a secondary cross waveguide formed in the substrate having a custom body shape, and a gap between the primary through waveguide and secondary cross waveguide. The custom tapered top region forces the TM mode to convert to a TE mode and cross into the secondary cross waveguide.

Fabrication-tolerant and broadband polarization splitter and rotator

A fabrication technique for cleaving a substrate in an integrated circuit is described. During this fabrication technique, a trench is defined on a back side of a substrate. For example, the trench may be defined using photoresist and/or a mask pattern on the back side of the substrate. The trench may extend from the back side to a depth less than a thickness of the substrate. Moreover, a buried-oxide layer and a semiconductor layer may be disposed on a front side of the substrate. In particular, the substrate may be included in a silicon-on-insulator technology. By applying a force proximate to the trench, the substrate may be cleaved to define a surface, such as an optical facet. This surface may have high optical quality and may extend across the substrate, the buried-oxide layer and the semiconductor layer.

Back-side etching and cleaving of substrates

In one example embodiment, an integrated silicon photonic wavelength division demultiplexer includes an input waveguide, an input port, a plurality of output waveguides, a plurality of output ports, a first auxiliary waveguide, and a plurality of auxiliary waveguides. The input waveguide may be formed in a first layer and having a first effective index n1. The input port may be optically coupled to the input waveguide. The output waveguides may be formed in the first layer and may have the first effective index n1. Each of the output ports may be optically coupled to a corresponding output waveguide. The first auxiliary waveguide may be formed in a second layer below the input waveguide in the first layer. The first auxiliary waveguide may have a second effective index n2 and may have two tapered ends, and n2 may be higher than n1.

Echelle grating multiplexer or demultiplexer

An optical waveguide may include a silicon portion and a silicon nitride portion positioned over the silicon portion. The silicon portion may include a taper that decreases a width of the silicon portion. The optical waveguide may include a transition between a loaded single mode or multimode waveguide to a single mode waveguide. The silicon nitride portion may confine optical signals traveling through the optical waveguide in the silicon portion.

Waveguide routing configurations and methods

The disclosed embodiments relate to a system that locks a wavelength of a hybrid laser to a wavelength of a reference laser, wherein a lasing cavity of the hybrid laser includes a reflective gain medium (RGM) comprising an optical gain material coupled with an associated reflector, a phase tuner, a laser ring filter and a silicon mirror. During operation, while the hybrid laser is turned off, the system tunes a reference ring filter to the wavelength of the reference laser. Next, the system turns on the hybrid laser. The system then tunes the laser ring filter in the hybrid laser to the reference ring filter. Finally, the system adjusts the phase tuner in the hybrid laser to align a lasing cavity mode of the hybrid laser with the tuned laser ring filter.

Growing community of inventors

San Diego, CA, United States of America

Jin-Hyoung Lee