Samsung Electronics Co., Ltd.

Sungkyunkwan University

Rohm and Haas Electronic Materials Korea Ltd.

Dow Global Technolgoies LLC

Rohm & Haas Electronic Materials LLC

Korea Advanced Nano Fab Center

Daewoo Heavy Industries & Machinery Ltd.

Jin Hong Park

Min-Ji Kim

Yong-Soo Jeong

Jae Hwan Sim

Jae-Bong Lim

Won-Seok Kwon

Min Seok Kim

Eui-Hyun Ryu

Jung Kyu Jo

Sung Joo Lee

Young Jae Ko

You Rim Shin

Hye-Won Lee

Keun Hang Heo

Jung-June Lee

Suwoong Kim

Hae Ju Choi

Jung June Lee

Hyeon Je Son

Sung Pyo Baek

Tae Ho Kang

Chan Woo Kang

Jaewoo Shim

Kil Su Jung

Phillip Dene Hustad

Min Hee Jang

Cheng-Bai Xu

Mingqi Li

Jong Keun Park

Hyun-Woo Kim

Cha-Won Koh

Jae Woong Choi

Yong-Ju Yu

Jeong Hoon Kim

Eui Hyun Ryu

Hae Won Lee

Hyung Youl Park

Sang Heon Lee

EunHye Cho

Dong Hwan Jun

Hong Sub Shim

Jae Bong Lim

Jae Ho Jeon

Won Kyu Park

Seung Hyuk Choi

Sung Jun Kim

Kyung Ho Kim

Jae Woo Shim

Dong Ho Kang

Eunhye Cho

Ji-Hon Kang

Woo Young Choi

Ju Hee Lee

Je Jun Lee

Yoo-Jin Ghang

Jong Gon Heo

A super-steep switching device and an inverter device using the same are disclosed. The super-steep switching device includes a semiconductor channel disposed on a substrate and made of a semiconductor material having impact ionization characteristic; a source electrode and a drain electrode in contact with the semiconductor channel, wherein the source electrode and the drain electrode are disposed on the substrate and are spaced apart from each other; and a gate electrode disposed on the semiconductor channel so as to overlap only a portion of the semiconductor channel, wherein a top surface of the semiconductor channel includes a first area overlapping the gate electrode, and a second area non-overlapping the gate electrode, wherein a ratio of a length of the first area and a length of the second area is in a range of 1:0.1 to 0.4.

Super-steep switching device and inverter device using the same

Organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that in a first aspect comprise a crosslinker component that comprises a structure of the following Formula (I):

Coating compositions for use with an overcoated photoresist

A semiconductor device with multiple zero differential transconductance includes: a conductive substrate; a first insulating layer and a second insulating layer disposed on the conductive substrate; a first semiconductor and a second semiconductor disposed on first portions of the first insulating layer and the second insulating layer, respectively; a first buffer layer and a second buffer layer disposed on electrode contact areas of the first semiconductor and the second semiconductor, respectively; and an anode electrode and a cathode electrode disposed on second portions, which are different from the first portions, of the first insulating layer and the second insulating layer and on the first buffer layer and the second buffer layer, respectively, wherein the first semiconductor and the second semiconductor are disposed in parallel with each other and connected by the anode electrode and the cathode electrode.

Semiconductor device with multiple zero differential transconductance and method of manufacturing same

A super-steep switching device is provided. The super-steep switching device may include a substrate, a semiconductor channel on the substrate, a source electrode and a drain electrode, which are disposed on the semiconductor channel and spaced apart from each other, a gate electrode overlapping a portion of the semiconductor channel and not overlapping a remaining portion of the semiconductor channel, and an insulating layer disposed between the gate electrode and the semiconductor channel and covering an entire surface of the semiconductor channel.

A coating composition comprising a crosslinkable polyester polymer comprising an isocyanurate group and a crosslinkable group; a crosslinker; and an acid catalyst, wherein at least one of the crosslinkable polyester polymer and the crosslinker comprises an iodine-containing polymer.

Coating composition for photoresist underlayer

A polymer comprising a first repeating unit including an amino group protected by an alkoxycarbonyl group; a second repeating unit including a nucleophilic group; and a third repeating unit including a crosslinkable group, wherein the first repeating unit, the second repeating unit, and the third repeating unit are different from each other.

Polymers, underlayer coating compositions comprising the same, and patterning methods

A semiconductor device according to an embodiment may include a board, an insulation layer disposed on the board, a threshold voltage control layer disposed on the insulation layer, a first semiconductor layer disposed on the threshold voltage control layer, and a second semiconductor layer disposed on the threshold voltage control layer to cover a portion of the first semiconductor layer. A negative differential resistance device according to an embodiment has an advantageous effect in that the gate voltage enables a peak voltage to be freely controlled within an operation range of the device by forming the threshold voltage control layer.

Semiconductor device and manufacturing method thereof

Methods, apparatuses, and systems for processing multi-touch input in a multi-tasking terminal with a touch screen are described. In one method herein, an electronic apparatus displays a first application program on its touch screen while both the first application program and a second application program are being multitasked, detects a flicking of four or more fingers in the displayed first application program on the touch screen; and, in response to detecting of the flicking of four or more fingers, switches the touch screen from the display of the first application program to a display of the second application program.

Method and apparatus for processing multi-touch input at touch screen terminal

Provided is a negative differential resistance element having a 3-dimension vertical structure. The negative differential resistance element having a 3-dimension vertical structure includes: a substrate; a first electrode that is formed on the substrate to receive a current; a second semiconductor material that is formed in some region of the substrate; a first semiconductor material that is deposited in some other region and the first electrode of the substrate and some region of an upper end of the second semiconductor material; an insulator that has a part vertically erected from the substrate, the other part vertically erected from the second semiconductor material, and an upper portion stacked with a first semiconductor material; and a second electrode that is formed at an upper end of the second semiconductor material to output a current, thereby significantly reducing an area of the device and greatly improving device scaling and integration.

Negative differential resistance element having 3-dimension vertical structure

Disclosed is a photodetector in which a plurality of conductive stripes spaced apart from each other are bonded onto a two-dimensional semiconductor thin-film, and a pitch between adjacent conductive stripes is controlled to selectively adjust a plasmonic resonance wavelength zone, such that the photodetector has a high absorbance and a wide detection zone at the same time. Further, a manufacturing method thereof is disclosed. The photodetector includes a semiconductor thin-film; and a plurality of conductive stripes bonded onto the semiconductor thin-film and extending in a parallel manner to each other and spaced apart from each other.

Photodetector and method of manufacturing the photodetector

Organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that comprise that a blend of two or more resins, where one resin has epoxy groups either pendant or fused to the polymer backbone. Preferred coating compositions include: 1) a first resin that comprises one or more epoxy reactive groups; and 2) a crosslinker resin that is distinct from the first resin and comprises epoxy groups.

Methods and apparatuses are provided for displaying a screen in an electronic device. A message application is executed. An execution screen of the message application and a keyboard are displayed through a touch screen display of the electronic device while the message application is executed. A layer of the execution screen is overlaid with a layer of the keyboard. Based on a touch input on an object related to the keyboard, data related to the keyboard is transmitted to an external electronic device through a communication interface of the electronic device such that the external electronic device, based on the data related to the keyboard, displays the keyboard through a display of the second external electronic device. The execution screen is displayed through the touch screen display. The keyboard which has been displayed disappears from the touch screen display.

Display method and apparatus in portable terminal

A display method and apparatus of a portable terminal are provided. A given application is executed on the portable terminal and the executed application is entered into a division mode. At least one device other than the portable terminal is set to output at least one of a plurality of layers of the executed application. The at least one layer is transmitted to the at least one device.

Provided is a semiconductor device with negative differential transconductance. The semiconductor device includes a substrate, a gate electrode formed on the substrate, an insulating layer formed on the gate electrode, a source electrode material layer formed on the insulating layer, a semiconductor material layer formed on the insulating layer to be hetero-joined to the source electrode material layer, a source electrode formed on the source electrode material layer, and a drain electrode formed on the semiconductor material layer. A work function of the source electrode material layer is controlled by a gate voltage applied through the gate electrode, and the source electrode material layer shows negative differential transconductance depending on a level of the gate voltage.

Semiconductor device with negative differential transconductance and method of manufacturing the same

Growing community of inventors

Gyeonggi-do, South Korea

Jin Hong Park