Electronics and Telecommunications Research Institute

Lg Chem, Ltd

Sk on Co., Ltd.

Jin Hong Lee

Jin Soo Kim

Dae Kon Oh

Sung Ui Hong

Ho Sang Kwack

Byung Seok Choi

Hyun Soo Kim

Sung Jin Kim

Won Hee Kim

Myoung Lae Kim

Sung Bock Kim

Gyeong Shin Choi

In Haeng Cho

Dong Hyun Jo

Hyun-Ki Kim

Bae Wook Park

Ha Jae Chung

Ok-Keun Shin

Ha-Jae Chung

Chan Woo Kim

An electrolyte solution for a lithium secondary battery includes an organic solvent, a lithium salt, and a pentaerythritol diphosphite-based compound including at least one substituent selected from the group consisting of a silyl group, a sulfonyl group, a phosphoryl group and a phosphino group. A lithium secondary including the electrolyte solution is provided.

Electrolyte solution for lithium secondary battery and lithium secondary battery including the same

The present invention provides a method for preparing a polybutene oligomer including a step of oligomerizing a polymerization solution including a halogenated hydrocarbon solvent, a nonpolar hydrocarbon solvent and an isobutene monomer in the presence of an organometal catalyst.

Method for preparing polybutene oligomer

Provided are a quantum dot laser diode and a method of manufacturing the same. The method of manufacturing a quantum dot laser diode includes the steps of: forming a grating structure layer including a plurality of gratings on a substrate; forming a first lattice-matched layer on the grating structure layer; forming at least one quantum dot layer having at least one quantum dot on the first lattice-matched layer; forming a second lattice-matched layer on the quantum dot layer; forming a cladding layer on the second lattice-matched layer; and forming an ohmic contact layer on the cladding layer. Consequently, it is possible to obtain high gain at a desired wavelength without affecting the uniformity of quantum dots, so that the characteristics of a laser diode can be improved.

Quantum dot laser diode and method of manufacturing the same

Provided are a semiconductor laser diode and a method of manufacturing the same. The semiconductor laser diode includes a lower cladding layer disposed on a substrate; a ridge including an optical waveguide layer, an active layer, an upper cladding layer, and an ohmic contact layer, which are sequentially stacked on the lower cladding layer, and having a predetermined width, which is obtained by performing a channel etching process on both sides of the ridge; an oxide layer disposed on surfaces of the upper and lower cladding layer to control the width of the ridge; a dielectric layer disposed on left and right channels of the ridge; an upper electrode layer disposed on the entire surface of the resultant structure to enclose the ridge and the dielectric layer; and a lower electrode layer disposed on a bottom surface of the substrate. The method is simpler than a conventional process of manufacturing a semiconductor laser diode. Also, by controlling a wet oxidation time, the width of a ridge can be freely controlled and an ohmic contact layer can be automatically formed.

Semiconductor laser diode and method of manufacturing the same

Provided is a method of forming quantum dots, including: forming a buffer layer on an InP substrate so as to be lattice-matched with the InP substrate; and sequentially alternately depositing In(Ga)As layers and InAl(Ga)As or In(Ga, Al, As)P layers that are greatly lattice-mismatched with each other on the buffer layer so as to form In(Ga, Al)As or In(Ga, Al, P)As quantum dots.

Method for forming quantum dots by alternate growth process

Provided is a distributed feedback semiconductor laser structure including: a first clad layer; a first ridge waveguide formed on the first clad layer; an active layer formed on the first ridge waveguide; a second ridge waveguide formed on the active layer; a second clad layer formed on the second ridge waveguide; an ohmic contact layer formed on the second clad layer; and a plurality of gratings formed in at least one of the first and second clad layers, making a predetermined angle with the first ridge waveguide or the second ridge waveguide, and periodically arranged in a longitudinal direction of the first or second ridge waveguide. As a result, a general hologram lithography process capable of mass production is applied to the present invention so that process time can be reduced. Also, a distributed feedback semiconductor laser structure using a quantum-dot active layer that does not require an additional process for obtaining a pure single-wavelength is provided.

Semiconductor laser structure including quantum dot

A distributed feedback (DFB) quantum dot semiconductor laser structure is provided. The DFB quantum dot semi-conductor laser structure includes: a first clad layer formed on a lower electrode; an optical waveguide (WG) formed on the first clad layer; a grating structure layer formed on the optical WG and including a plurality of periodically disposed gratings; a first separate confinement hetero (SCH) layer formed on the grating structure layer; an active layer formed on the first SCH layer and including at least a quantum dot; a second SCH layer formed on the active layer; a second clad layer formed on the second SCH layer; an ohmic layer formed on the second clad layer; and an upper electrode formed on the ohmic layer. Accordingly, an optical WG is disposed on the opposite side of the active layer from the grating structure layer, thereby increasing single optical mode efficiency. And, an asymmetric multi-electrode structure is used for applying current, thereby maximizing purity and efficiency of the single mode semiconductor laser structure.

Distributed feedback (DFB) quantum dot laser structure

The present invention relates to handling an interrupt between the multiple interrupt generating resources for use in connection with a pended bus and a host system, in which there is disclosed a multiple interrupt controller using an intelligent priority-decision mechanism and control method thereof which makes possible to transmit various interrupt resources within the system that is connected to the pended bus toward the host system through one interrupt line among the bus.

Multiple interrupt controller and control method using an intelligent

The present invention relates to an integrated multimedia board for a high speed local bus, and has an object to simultaneously process multimedia data at high speed in one integrated board by using a PCI local bus. To achieve the object, the present invention consists of an audio unit which processes an audio signal, a video unit which processes a video signal, a graphics unit which processes text and graphics data, and a host interface unit for interfacing with a PCI bus which is a high speed local bus. Also, the present invention can process information of a text, a sound, a still image, a motion image, and a graphics data, etc, and is useable for video teleconferencing, and a video editing, etc.

Growing community of inventors

Daejeon, South Korea

Jin Hong Lee