Hyundai Electronics Industries Co. Ltd.

Jin-Hong Anh

Hae-Young Rha

Joo-Hiuk Son

A semiconductor memory device having a data line structure is disclosed which is capable of eliminating a noise interference between data lines and enhancing an integrity of a memory device. In the semiconductor memory device, a pair of data lines are not aligned on the identical plane. Namely, it is separated into an upper layer line and a lower layer line using an insulation film, wherein the data lines forming a plurality of pairs of the data lines are aligned in the upper wiring line and lower wiring line on a semiconductor substrate, and have at least one intersected portion therebetween.

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Seoul, South Korea

Jin-Hong Anh