Hynix Semiconductor Inc.

Skhynix Inc.

Duality Inc.

Other

Seoul National University

Samsung Electronics Co., Ltd.

Samsung Sdi Co., Inc.

Snu Rdb Foundation

One Semiconductor Corporation

Jin Hong Ahn

Hee Bok Kang

Jae Jin Lee

Sang Don Lee

Yil Wook Kim

Young June Park

Jun Hee Cho

Sung Eon Park

Do Hun Kim

Hyun Suk Lee

Sung Chul Lee

Ju Yong Kim

Chan Ho Lee

Dong Myung Suh

Jin Kwang Kim

Young Jun Park

Gwang Ha Park

Jae In Lee

Dai-il Oh

A semiconductor device includes a plurality of input/output (I/O) pads; a serial input pad; a serial output pad; a plurality of interface circuits respectively corresponding to the I/O pads; and a plurality of option setting circuits respectively corresponding to the interface circuits, suitable for setting options of the respective interface circuits, wherein the serial input pad, the interface circuits, the option setting circuits, and the serial output pad configure a serial chain.

Semiconductor device for setting options of I/O interface circuits

A semiconductor memory device includes a plurality of memory cell transistors arranged along a common semiconductor layer. Each of the plurality of memory cell transistors comprises a first source/drain region and a second source/drain region formed in the common semiconductor layer; a gate stack formed on a portion of the common semiconductor layer between the first source/drain region and the second source/drain region; and an electrical floating portion in the portion of the common semiconductor layer, a charge state of the electrical floating portion being adapted to adjust a threshold voltage and a channel conductance of the memory cell transistor. The plurality of memory cell transistors connected in series with each other along the common semiconductor layer provide a memory string.

Semiconductor memory device, method of driving the same and method of fabricating the same

The present invention discloses an asynchronous serial communication system and method. The asynchronous serial communication system may include a semiconductor device having two terminals and configured to receive a voltage required for an operation from data transmitted through one terminal; and a controller configured to perform asynchronous serial communication with the semiconductor device with two terminals. The asynchronous serial communication system may perform asynchronous serial communication between the semiconductor device and the controller in order to write or read data through the one terminal.

Semiconductor device and controller for asynchronous serial communication, and asynchronous serial communication method and system

A semiconductor device and a method of fabricating the same are disclosed. A semiconductor device according to an embodiment of the present invention includes: a first type doped semiconductor substrate; a second type doped deep well configured such that one or more semiconductor device elements are formed therein; a first type doped first well formed inside a region surrounded by the deep well of the one surface of the semiconductor substrate, and separated from the semiconductor substrate by the deep well; a first electrical contact formed on a part of the one surface of the semiconductor substrate, and electrically connected to the first well; and a second electrical contact formed on another surface of the semiconductor substrate.

Semiconductor device containing integrated circuit communicating with external apparatus via two terminals

Semiconductor device for sensor application using contacts located on top surface and bottom surface and method for fabricating thereof

A method for performing authentication in a portable electronic device is provided. The method includes identifying whether a peripheral electronic device is located within a certain distance from the portable electronic device, receiving biometrics information from the peripheral electronic device when the peripheral electronic device is located within the certain distance from the portable electronic device, identifying whether the biometrics information received from the peripheral electronic device is identical to biometrics information stored in the portable electronic device, and releasing security set to the portable electronic device when the biometrics information received from the peripheral electronic device is identical to the biometrics information stored in the portable electronic device.

Method for performing authentication using biometrics information and portable electronic device supporting the same

A reference potential adjusting apparatus is provided. The reference potential adjusting apparatus includes a reference potential measuring unit configured to measure a potential of a solution, a counter electrode disposed in the solution, and configured to change the potential of the solution through oxidation-reduction reactions with the solution, and a comparator configured to compare a measurement voltage provided by the reference voltage measuring unit to a reference voltage provided by a reference voltage supply unit, and to adjust reactions of the counter electrode with the solution according to the result of the comparison. The reference potential measuring unit includes a reference electrode, a common electrode disposed to be spaced apart from the reference electrode, and at least one nano structure contacting the reference electrode and the common electrode, and having electrical conductivity changing according to the potential of the solution.

Reference potential adjustment device and a measuring device equipped with the same

A nonvolatile ferroelectric memory device includes a plurality of unit cell arrays, wherein each of the plurality of unit cell arrays includes: a bottom word line; a plurality of insulating layers formed on the bottom word line, respectively; a floating channel layer comprising a plurality of channel regions located on the plurality of insulating layers and a plurality of drain and source regions which are alternately electrically connected in series to the plurality of channel regions; a plurality of ferroelectric layers formed respectively on the plurality of channel regions of the floating channel layer; and a plurality of word lines formed on the plurality of ferroelectric layers, respectively. The unit cell array reads and writes a plurality of data by inducing different channel resistance to the plurality of channel regions depending on polarity states of the plurality of ferroelectric layers.

Nonvolatile ferroelectric memory device

A RFID device has a nonvolatile ferroelectric memory including a memory cell array area supplied only with a high voltage and a peripheral area supplied with a low voltage, thereby reducing power consumption. The RFID device includes an antenna adapted and configured to transceive a radio frequency signal from an external communication apparatus, an analog block adapted and configured to generate a power voltage in response to the radio frequency signal received from the antenna, a digital block adapted and configured to receive the power voltage from the analog block, transmit a response signal to the analog block and output a memory control signal, and a memory adapted and configured to generate a high voltage with the power voltage and access data in response to the memory control signal.

RFID device having nonvolatile ferroelectric memory device

A reformer that directly receives heat and performs an ATR catalyst reaction and an SR catalyst reaction. The reformer includes: a reforming reactor to reform hydrogen containing fuel into reformed gas having abundant hydrogen by performing an ATR catalyst reaction and an SR catalyst reaction; a heat source contacting one side of the reforming reactor and providing the reforming reactor with heat; and an air feeder to feed the reforming reactor with air by an air flow control unit. Thus, the ATR catalyst reaction featuring a relatively short preheating time is performed while the reformer is initially operated, so that hydrogen can be produced when the reformer is initially operated, thereby efficiently operating a fuel cell.

Reformer and fuel cell system using the same

A radio frequency identification (RFID) device includes an antenna configured to transmit or receive a radio frequency signal to or from an external communication apparatus; an analog block configured to generate a first power voltage in response to the radio frequency signal; a digital block configured to receive the first power voltage from the analog block, to transmit a response signal to the analog block, and to output a memory control signal; and a memory configured to read/write data in response to the memory control signal, the memory including a high voltage generating unit for generating a second power voltage from the first power voltage, a first portion driven by the second power voltage, and a second portion driven by the first power voltage, wherein the level of the first power voltage is lower than that of the second power voltage.

RFID device having a nonvolatile ferroelectric memory

A nonvolatile latch circuit and a system on a chip are provided with the same feature detection of change of latch data in an active period to store new data in a latch without an additional data storage time. The nonvolatile latch circuit does not require an additional data storage period but detects change of latch data in the active period to store new data in a nonvolatile latch unit. When power is accidentally off, new data are constantly stored in the nonvolatile latch unit, thereby preventing data loss and improving an operating speed without a booting time for restoring data.

Nonvolatile latch circuit and system on chip with the same

A nonvolatile ferroelectric memory device is provided so as to control read/write operations of a nonvolatile memory cell using a channel resistance of the memory cell which is differentiated by polarity states of a ferroelectric material. In the memory device, an insulating layer is formed on a bottom word line, and a floating channel layer comprising a N-type drain region, a P-type channel region and a N-type source region is formed on the insulating layer. Then, a ferroelectric layer is formed on the floating channel layer, and a word line is formed on the ferroelectric layer. As a result, the resistance state induced to the channel region is controlled depending on the polarity of the ferroelectric layer, thereby regulating the read/write operations of the memory cell array.

Growing community of inventors

Gyeonggi-do, South Korea

Jin Hong Ahn