Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Ovonyx Inc.

Jin-ho Oh

Hideki Horii

Byoung-Deog Choi

Soon-Oh Park

Dong-ho Ahn

Man-Sug Kang

Young-Hyun Kim

Stephen J Hudgens

Jong-myeon Park

Mi-jeong Song

Hyung Min Kim

Hun-joo Lee

Jeong-Hee Park

Hye-Young Park

Dong-Ho Ahn

Gyu-Hwan Oh

Doo-Hwan Park

Hee-Ju Shin

Young-kuk Kim

Jang Soo Kim

Hyuk Soon Kwon

Yeon-jeong Kim

Carl Schell

Se Myung Kwon

Jonathan D Maimon

Doo Youl Lee

Heo-ju Shin

Provided herein is a method of sequential and multiple immunostaining for detection of various antigens in the same specimens, which may be used for qualitative or quantitative analysis of proteins expressed, gene analysis, and morphological analysis even in specimens where only a small amount is available.

Method of sequential and multiple immunostaining for detection of various antigens in the same specimens

A thin film transistor array panel includes: a gate conductor disposed on a substrate and including a gate line and a gate electrode, a semiconductor layer overlapping the gate electrode and including an oxide semiconductor, a data conductor including a data line intersecting the gate line, a source electrode connected to the data line, and a drain electrode facing the source electrode, a sidewall covering side surface parts of the drain electrode and the source electrode adjacent to a channel region of the semiconductor layer, and a passivation layer covering the source electrode, the drain electrode, and the sidewall.

Thin film transistor array panel and method for manufacturing the same

Methods of manufacturing non-volatile memory devices may include separating first phase-change material groups and second phase-change material groups, which have different sizes, from a target including phase-change materials and faulting a phase-change material layer on an object by using the first phase-change material groups and the second phase-change material groups.

Methods of manufacturing non-volatile phase-change memory devices

A phase change structure includes a first phase change material layer pattern and a second phase change material layer pattern. The first phase change material layer pattern may partially fill a minute structure, and the second phase change material layer pattern may fully fill the minute structure. The first phase change material layer pattern may include a first phase change material, and the second phase change material layer pattern may include a second phase change material having a composition substantially different from a composition of the first phase change material.

Methods of forming a phase change layer and methods of fabricating a phase change memory device including the same

A non-volatile memory device includes a lower electrode, a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode, and an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer. The phase-change material layer includes a phase-change material including a composition represented by the formula (I)(IIIIIIV), where I is at least one of As and Se, II is at least one of Ge, Si and Sn, III is at least one of Sb and Bi, and IV is at least one of Te and Se, and where 0.001&#x2266;A&#x2266;0.3, 0.001&#x2266;X&#x2266;0.3, 0.001&#x2266;Y&#x2266;0.8, 0.1&#x2266;Z&#x2266;0.8, and X+Y+Z=1.

Non-volatile memory device including phase-change material

A non-volatile memory device including a phase-change material, which has a low operating voltage and low power consumption, includes a lower electrode; a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode, wherein the phase-change material layer includes a phase-change material having a composition represented by SnSbTeor, alternatively with substitutions, in whole or in part, of silicon and/or indium for tin, arsenic and/or bismuth for antimony, and selenium for tellurium; and an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer. Here, 0.001&#x2266;X&#x2266;0.3, 0.001&#x2266;Y&#x2266;0.8, 0.1&#x2266;Z&#x2266;0.8, and X+Y+Z=1.

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Seongnam-si, South Korea

Jin-ho Oh