Korea Kumho Petrochemical Co., Ltd.

Jin Ho Kim

Dae Hyeon Shin

Seung Jae Lee

Hyun Sang Joo

Jung Hoon Oh

Jin Bong Shin

Joon Hee Han

Hyun Soon Lim

Sang Jin Kim

A resist additive represented by Formula 1 below and a resist composition including the additive are disclosed. The resist additive improves hydrophobicity of the surface of the resist film to prevent materials from being leached in water during exposure of immersion lithography and is converted to have hydrophilicity by deprotection reaction during development. As a result, a micropattern of a resist film with excellent sensitivity and high resolution is formed.  In Formula 1, the substituents are defined as described in the specification.

Additive for resist and resist composition comprising same

A resist resin composition includes 100 parts by weight of a copolymer represented by Formula 3 below; 0.5 to 1.5 parts by weight of a photoacid generator and 700 to 1,500 parts by weight of a solvent:  wherein R, R, and Rare each independently a Calkyl group, a Ccycloalkyl group, an ether group, an ester group, a carbonyl group, an acetal group, an epoxy group, a nitrile group, or an aldehyde group, R, R, and Rare each independently hydrogen or a methyl group, and l, m, n, and o each independently refer to the number of repeating units in a main backbone and satisfy the conditions: l+m+n+o=1, 0&#x2266;l/(l+m+n+o)&#x3c;0.4, 0&#x3c;m/(l+m+n+o)&#x3c;0.6, 0&#x2266;n/(l+m+n+o)&#x3c;0.6, and 0&#x3c;o/(l+m+n+o)&#x3c;0.4.

Copolymer for resist comprising novel acryl based monomer and resin composition for resist comprising the same

Disclosed are a photoacid generator, a copolymer, a chemically amplified resist composition, and a method of forming a pattern using the chemically amplified resist composition. The photoacid is connected with a main chain of the copolymer, whereby the photoacid is equally dispersed within a resist layer, and characteristics of line edge roughness of a resist pattern is improved.

Photoacid generator, copolymer, chemically amplified resist composition, and method of forming pattern using the chemically amplified resist composition

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Asan-si, South Korea

Jin Ho Kim