Samsung Electronics Co., Ltd.

Samsung Sdi Co., Inc.

Jin-hee Kim

Sung-Ho Kim

In-Wook Cho

Myeong-Cheol Kim

Sang-Su Kim

Geum-Jong Bae

Sung-Woo Lee

Doo-youl Lee

Nam-geol Lee

Dong-Sung Kim

Woo-hyuk Choi

Ki-chul Kim

Sang-Won Kim

Ju-sang Lee

Myung-Yoon Um

Young-ha Kim

Byoung-jin Lee

Gi-hyeong Lee

Geon-Woo Park

Dae-hyung Kim

Myoung-Kyu Seo

Han-kyeol Kim

Jea-yun So

Yeon-kyu Jeong

A robot cleaner includes a cleaner main body, a driver to move the cleaner main body, a sensor to sense an obstacle, and a sensor driver to rotate the sensor so that the sensor reciprocates in left and right directions within a predetermined angle range about a reference direction. In addition, a processor controls the driver to adjust a traveling direction of the cleaner main body based on the sensing result of the sensor, and to change the reference direction with a rotation direction if the cleaner main body is rotated.

Robot cleaner and method for driving the same

A search method, an apparatus, and a system for providing preview information are provided. The search method includes receiving a list of search result items and preview information from a server in real time and outputting the list and the preview information. Therefore, a search time can be efficiently reduced, which enables a user to obtain a desired search result more rapidly.

Search method, apparatus, and system for providing preview information

A method for installing an application according to an exemplary embodiment downloads an application purchased by a client and installs the application in a terminal in an asynchronous manner. The method includes transmitting a request to download at least one application to the server, downloading an application from the server in response to the request to download at least one application and storing the downloaded application, and installing the stored application in the terminal in an order of completion of downloading of the application.

Method and system for installing applications

Disclosed is a semiconductor device having an align key and a method of fabricating the same. The semiconductor device includes a semiconductor substrate having a cell area and an align key area. An isolation layer that defines a cell active area is disposed in the cell area of the semiconductor substrate. A cell charge storage layer pattern is disposed across the cell active area. An align charge storage layer pattern is disposed in the align key area of the semiconductor substrate. An align trench self-aligned with the align charge storage layer pattern is formed in the align key area of the semiconductor substrate.

Semiconductor device having align key and method of fabricating the same

Erasure methods for a nonvolatile memory cell that includes a gate electrode on a substrate, source and drain regions in the substrate at respective sides of the gate electrode, and a charge storage layer interposed between the gate electrode and the substrate. A nonzero first voltage is applied to the source region starting at a first time. While continuing to apply the first nonzero voltage to the source region, a second voltage having an opposite polarity to the first voltage is applied to the gate electrode starting at a second time later than the first time. The second voltage may increase in magnitude, e.g., stepwise, linearly and/or along a curve, after the second time.

Soft erasing methods for nonvolatile memory cells

There is provided a method of fabricating a local SONOS type gate structure and a method of fabricating a nonvolatile memory cell having the same. The method includes forming a gate dielectric layer on a semiconductor substrate. A gate pattern, including a gate electrode and a hard mask layer pattern which are sequentially stacked, is formed on the gate dielectric layer. Then, a recess is formed on the boundary of the gate pattern and the gate dielectric layer. The recess is formed on one side wall of the gate pattern, and is prevented from forming on the other side wall of the gate pattern. A tunnel layer and a trapping dielectric layer are sequentially formed on substantially the entire surface of the semiconductor substrate having the recess formed thereon to fill the recess. At least a portion of the trapping dielectric layer is formed inside the recess.

Method of fabricating local SONOS type gate structure and method of fabricating nonvolatile memory cell having the same

Growing community of inventors

Gyeonggi-do, South Korea

Jin-hee Kim