University-Industry Cooperation Group of Kyung Hee University

Samsung Display Co., Ltd.

Silicon Display Technology Co., Ltd.

Lg Display Co., Ltd.

Lg Philips Lcd Co., Inc.

Other

Corning Incorporated

Carestream Health, Inc.

The Catholic University of Korea Industry-Academic Cooperation Foundation

Hyundai Display Technology Inc.

Silicon Display Technology

Iljin Nanotech Co., Ltd.

Samwon C&g Co., Ltd.

Jin Hee Jang

Hyo Min Kim

Jeong Gi Kim

Christophe Avis

Jae Gwang Um

Seong-Jin Park

Ji-Ho Hur

Se-Hwan Kim

Sung-Hoon Lim

Tae Hun Kim

Kyung Ho Kim

Timothy John Tredwell

Heung Lyul Cho

Jae-Young Oh

Jae-Hwan Oh

Dhang Kwon

Ravi K Mruthyunjaya

Kyong Hwan Oh

Tae-Woong Kim

Hang Sup Cho

Jae Sic Lee

Tae Joon Song

Soo-Young Yoon

Ho Su Kim

Seong Pil Cho

Su Hui Lee

Doo Hee Jang

Mohammad Masum Billah

Woo-Sung Shon

Eun Sa Hwang

Youn-Duck Nam

Kyu-Chang Park

Mallory Mativenga

Sung-Hoon Kim

Jong-Hyun Choi

Do-Young Kim

Jonghyun Choi

Mingqian He

Taewoong Kim

Sunhee Lee

Hyun Kil Nam

Sang Wook Lee

Jae-won Choi

Robert George Manley

Younggug Seol

Bum Soo Kim

Ji Ho Hur

Seung-Hyun Park

Karan Mehrotra

Kyu Chang Park

Jun-Hyuk Cheon

Jae-Eun Yoo

Nu Ree Um

Young-Gug Seol

Suhui Lee

Jaegwang Um

Je Hwang Ryu

Nikolay Zhelev Zhelev

Jae-gak Kim

Yoon Ho Nam

Yuanfeng Chen

Suk-jae Chung

Se-Il Cho

Min Sang Park

Hyeong Pil Kim

Xiuling Li

Youn-Goo Kim

Eun-Hyun Kim

Ki-Hyoung Kim

Sang Eun Moon

Seung-Soo Kim

Jun-Hyuk Chon

Byoung-Kwon Choo

Eung-Bum Kim

Gurn Go Han

In Keun Woo

Man Ju Seok

A thin-film transistor (TFT), includes: a substrate (); an organic semiconductor (OSC) layer () positioned on the substrate; a dielectric layer () positioned on the OSC layer; and a polymeric interlayer () disposed in-between the OSC layer and the dielectric layer, such that the dielectric layer is configured to exhibit a double layer capacitance effect. A method of forming a thin-film transistor, includes: providing a substrate; providing a bottom gate layer atop the substrate; disposing consecutively from the substrate, an organic semiconductor (OSC) layer, a dielectric layer, and a top gate layer; and patterning the OSC layer, the dielectric layer, and the top gate layer using a single mask.

Low-voltage operation dual-gate organic thin-film transistors and methods of manufacturing thereof

The present invention disclosures an oxide semiconductor transistor and a method of fabricating the same. The oxide semiconductor transistor according to an embodiment of the present invention includes a first gate electrode formed on a substrate; a first gate insulating film formed using a solution process on the first gate electrode; a source electrode and a drain electrode separately formed on one surface of the first gate insulating film; an oxide semiconductor film formed using a solution process on the first gate insulating film and the source and drain electrodes; a second gate insulating film formed using a solution process on the oxide semiconductor film; pixel electrodes separately formed on one surface of the second gate insulating film and electrically connected to the source and drain electrodes, respectively; and a second gate electrode formed on the second gate insulating film. According to the present invention, the first and second gate insulating films and the oxide semiconductor film are formed using a solution process, and an offset present between the source electrode and the second gate electrode and an offset present between the drain electrode and the second gate electrode are each adjusted to be 1 &#x3bc;m or more to reduce drain current, thereby stabilizing the electrical properties of the oxide semiconductor transistor.

Oxide semiconductor transistor having dual gate structure and method of fabricating the same

Disclosed are a structure of a quantum-dot light emitting device including a charge generation junction layer and a method of fabricating the quantum-dot light emitting device. A quantum-dot light emitting device according to an embodiment of the present invention includes a negative electrode, a first charge generation junction layer including a p-type semiconductor layer and an n-type semiconductor layer, a quantum-dot light emitting layer, a hole transport layer, a second charge generation junction layer including a p-type semiconductor layer and an n-type semiconductor layer, and a positive electrode. The first and second charge generation junction layers is formed using a solution process. Accordingly, charge generation and injection can be stabilized, a process time can be shorted, and problems in the work function a positive or a negative electrode of a quantum-dot light emitting device can be addressed.

Quantum-dot light emitting device comprising solution processed charge generation junction and manufacturing method thereof

A display device according to an embodiment of the present disclosure is provided. The display device comprises a light emitting diode, a first transistor connected between an initialization power source and an anode of the light emitting diode and having a gate electrode connected to an initialization line, and an initialization driver for supplying an initialization signal to the initialization line. The initialization driver supplies the initialization signal every frame when driven at a first frequency and supplies the initialization signal every set of two or more frames when driven at a second frequency different from the first frequency.

Display device

The present invention discloses a thin-film light-emitting device including a charge generating junction layer and a method of fabricating the thin-film light-emitting device. The thin-film light-emitting device including a charge generating junction layer according to one embodiment of the present invention includes a negative electrode; at least one light-emitting unit formed on the negative electrode and including a charge generating junction layer, an electron injection/transport layer, a thin-film light-emitting layer, and a hole injection/transport layer in a sequential order; and a negative electrode formed on the light-emitting unit. In the thin-film light-emitting device of the present invention, the charge generating junction layer has a layer-by-layer structure in which a p-type semiconductor layer and an n-type semiconductor layer are formed, and the concentration of oxygen vacancies at the interface between the p-type and n-type semiconductor layers is adjusted by annealing the n-type semiconductor layer.

Thin-film light-emitting device including charge generating junction layer and method of fabricating thin-film light-emitting device

Disclosed is a quantum dot light-emitting diode including a positive electrode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and a negative electrode, wherein the hole injection layer is a p-type oxide semiconductor represented by Formula 1 below:CuSnS&#x2014;(Ga)O,&#x2003;&#x2003;[Formula 1]

Quantum dot light-emitting diode and method of fabricating the same

Provided is a light emitting diode (LED) and a multi-stacked LED including a charge generation junction (CGJ) layer, and a manufacturing method thereof. An LED including an anode, a hole transport layer, a light emitting layer, and a cathode, includes a CGJ layer in a layer-by-layer structure in which an n-type oxide and a p-type oxide formed on at least one surface of the light emitting layer are sequentially stacked. Here, the n-type oxide includes zinc oxide (ZnO) and the p-type oxide is represented by the following Formula: CuSnS&#x2014;(Ga)O. Here, 0.2&#x3c;x&#x3c;1.5.

Light emitting device (LED) and multi-stacked LED including charge generation junction (CGJ) layer, and manufacturing method thereof

Disclosed is a method of fabricating a stretchable electronic device, the method including a step of forming one or more semiconductor devices on a first carrier substrate; a step of forming semiconductor device array patterns by separating semiconductor device arrays each including the semiconductor devices; a step of releasing the semiconductor device array patterns from the first carrier substrate; a step of forming a stretchable substrate on a second carrier substrate; and a step of transferring the released semiconductor device array patterns onto the stretchable substrate.

Stretchable electronic device and method of fabricating the same

Disclosed are an oxide semiconductor thin film transistor and a method of fabricating the same. An oxide semiconductor thin film transistor according to an embodiment of the present disclosure includes a substrate; a first gate electrode formed on the substrate; a gate insulator formed on the first gate electrode; an oxide semiconductor layer formed on the gate insulator; source and drain electrodes formed by depositing carbon nanotubes (CNTs) and a metal electrode on the formed the oxide semiconductor layer and patterning the deposited CNTs and metal electrode such that the source electrode and the drain electrode are spaced apart from each other; and a passivation layer formed on the formed source and drain electrodes, wherein the source and drain electrodes serve to prevent diffusion of a metal of the metal electrode into the formed oxide semiconductor layer, due to the CNTs of the source and drain electrodes.

Oxide semiconductor thin film transistor and method of fabricating the same

An oxide thin-film transistor includes a substrate; a first gate electrode formed on the substrate; a gate insulator formed on the first gate electrode; an oxide semiconductor layer formed on the gate insulator to correspond to the first gate electrode; source/drain electrodes formed to be spaced from each other on the oxide semiconductor layer and formed in a shape of a plurality of island patterns; a passivation layer formed on the source/drain electrodes, where the source/drain electrodes include a first area formed in a direction of the first gate electrode with respect to a horizontal plane of the substrate; and a second area formed in an opposite direction to the first area, and the plurality of island patterns are formed such that the first areas are separated from each other and thus have resistance to external stress.

Oxide semiconductor thin-film transistor and method of fabricating the same

Growing community of inventors

Seoul, South Korea

Jin Hee Jang