Samsung Electronics Co., Ltd.

Jin-Ha Jeong

Vladimir Urazaev

Urazaev Vladimir

Hea-Yun Lee

Jae-hyoung Choi

Jin Hyeock Choi

Ki-Yeon Park

Jin Hwan Choi

Yong-Hoon Son

Jung-ho Kim

Hee-Seok Lee

Young-Lim Park

Yong-hoon Kim

Dong-Hyun Im

Jung-Hyeon Kim

Jong-Hyuk Kang

Jin-il Lee

Hyeong-Geun An

Ji-hyun Lee

Sung-Lae Cho

Sung-Woo Hyun

Dong-Il Park

Kyoung-Eun Uhm

Tae-Cheol Lee

Yong-Sang Jeong

Ae-Gyeong Kim

Seung-Back Shin

Provided are semiconductor devices and methods of fabricating the same. The methods may include forming a molding layer on a semiconductor substrate. A storage electrode passing through the molding layer is formed. A part of the storage electrode is exposed by partially etching the molding layer. A sacrificial oxide layer is formed by oxidizing the exposed part of the storage electrode. The partially-etched molding layer and the sacrificial oxide layer are removed. A capacitor dielectric layer is formed on the substrate of which the molding layer and the sacrificial oxide layer are removed. A plate electrode is formed on the capacitor dielectric layers.

Semiconductor devices and methods of fabricating the same

A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes a device isolation region, a trench formed in the device isolation region, a void connected to the trench in the device isolation region, a first mask pattern formed along sidewalls of the trench and protruding inwardly with respect to the void, a gate insulating film formed along the sidewall of the void, and a gate electrode filling the trench and at least a portion of the void.

Semiconductor device

A method of forming a reticle includes: loading a blank reticle; projecting an electron beam; moving a second aperture plate having a first pattern aperture and a second pattern aperture so that the first pattern aperture is directly overlapped by a first aperture of a first aperture plate, the electron beam passing through the first pattern aperture after passing the first aperture; exposing the blank reticle with the electron beam after the electron beam passes the first pattern aperture, to form a first exposure pattern; moving the second aperture plate so that the second pattern aperture is directly overlapped by the first aperture of the first aperture plate, the electron beam passing through the second pattern aperture after passing the first aperture; exposing the blank reticle with the electron beam after the electron beam passes the second pattern aperture, to form a second exposure pattern; and developing the blank reticle having the first and second exposure patterns to form the reticle having first and second patterns.

Exposure apparatus for forming a reticle

A method including loading a blank reticle; projecting an electron beam; moving a second aperture plate having a first and second pattern aperture so the first pattern aperture is overlapped by a first aperture of a first aperture plate, the electron beam passing through the first pattern aperture after passing the first aperture; exposing the blank reticle with the electron beam that passes the first pattern aperture to form a first exposure pattern; moving the second aperture plate so the second pattern aperture is overlapped by the first aperture of the first aperture plate, the electron beam passing through the second pattern aperture after passing the first aperture; exposing the blank reticle with the electron beam after passing the second pattern aperture, to form a second exposure pattern; and developing the blank reticle having the first and second exposure patterns to form the reticle having first and second patterns.

Exposure apparatus for forming a reticle and method of forming a reticle using the same

In a method of forming a reticle and electron beam exposure system, first electron beams are irradiated onto a first region of a blank reticle having a light shielding layer and a photosensitive layer, to form first shot patterns. Second electron beams having a cross-sectional area larger than the first electron beams are irradiated onto a second region of the blank reticle. The photosensitive layer is developed to form first and second mask patterns at the first and second regions, respectively. The light shielding layer is etched off using the first and second mask patterns as an etching mask, thereby forming the mother pattern including a first pattern in the first region and a second pattern in the second region. Accordingly, the enlargement of the second electron beams reduces the scan time for the blank reticle, thereby reducing the process time.

Methods of forming a photolithography reticle

Example embodiments relate to a semiconductor device. The semiconductor device may include a first semiconductor chip including a semiconductor substrate, a first through via that penetrates the semiconductor substrate, a second semiconductor chip stacked on one plane of the first semiconductor chip, and a shielding layer covering at least one portion of the first and/or second semiconductor chip and electrically connected to the first through via.

Semiconductor device including shielding layer and fabrication method thereof

Exposure systems include a beam generator, which is configured to irradiate source beams in a direction of an object to be exposed by the source beams, along with first and second beam shapers. The first beam shaper, which is disposed proximate the beam generator, has a first aperture therein positioned to pass through the source beams received from the beam generator. The second beam shaper is disposed proximate the first beam shaper. The second beam shaper includes a plate having a second aperture therein, which is positioned to receive the source beams that are passed through the first aperture of the first beam shaper. The second beam shaper further includes a first actuator and a first shift screen mechanically coupled to the first actuator.

Exposure systems for integrated circuit fabrication

A method of fabricating a vertical NAND semiconductor device can include changing a phase of a first preliminary semiconductor layer in an opening from solid to liquid to form a first single crystalline semiconductor layer in the opening and then forming a second preliminary semiconductor layer on the first single crystalline semiconductor layer. The phase of the second preliminary semiconductor layer is changed from solid to liquid to form a second single crystalline semiconductor layer that combines with the first single crystalline semiconductor layers to form a single crystalline semiconductor layer in the opening.

Methods of fabricating vertical semiconductor device utilizing phase changes in semiconductor materials

Provided are methods of forming a phase change memory device. A semiconductor device having a lower electrode and an interlayer insulating layer may be prepared. The lower electrode may be surrounded by the interlayer insulating layer. Source gases, a reaction gas and a purge gas may be injected into a process chamber of a semiconductor fabrication device to form a phase change material layer on a semiconductor substrate. The source gases may be simultaneously injected into the process chamber. The phase change material layer may be in contact with the lower electrode through the interlayer insulating layer. The phase change material layer may be etched to form a phase change memory cell in the interlayer insulating layer. An upper electrode may be formed on the phase change memory cell.

Methods of forming a phase change memory device

Growing community of inventors

Yongin-si, South Korea

Jin-Ha Jeong