Samsung Electronics Co., Ltd.

Jin-Gyun Kim

Ki-Hyun Hwang

Jae-young Ahn

Ji-Hoon Choi

Chang-woo Jung

Weon Seok Choi

Dong-Kyum Kim

Sang-Hoon Lee

Sung Jae Kim

Myoung-Bum Lee

Seung Won Oh

Chang Sik Lee

Jung-Geun Jee

Ji Hong Kim

Sung Hyun Chun

Hun-hyeong Lim

Hee-Seok Kim

Sung-hae Lee

Sang-Ryol Yang

Ju-Wan Lim

Sung-Hae Lee

Bon-Young Koo

Jung-Ho Kim

Young-Pil Kim

Won-Hee Lee

Eun-ae Chung

Moon Sun Shin

Sang Ki Yoon

Jong Whal Kim

Jun Seok Kwon

Jae-Jin Shin

Jae Rim Jung

Seong Deok Cheon

Yoo-Chul Kong

Yeon-Seob Yun

Su-Jin Shin

Sang-ryol Yang

Jin-tae Noh

Koong-Hyun Nam

Hong-Suk Kim

Bean-Jun Jin

Jung-ho Kim

Eun-Young Lee

Han-Mei Choi

Young-Seok Kim

Hyeong Joon Seo

Kwon Jin Kim

Hyun Ah Kim

Young-Jae Kim

Woo Seog Song

Jong Kweon Ha

Hong-suk Kim

Dong-Chul Yoo

Ki-hyun Hwang

Jun-Kyu Yang

Hyun Namkoong

Yong-Woo Hyung

Tae Duk Kim

Nak Hyun Kim

Phil-Ouk Nam

Man-Sug Kang

Seon Uk Na

Ki-Sun Kim

Yeon-seob Yun

Kang Ho Choi

Bi-O Kim

Dong-Kak Lee

Jin-Tae Noh

Hae Gyun Shin

Byong-Ju Kim

Sun-Hee Son

Hun Hyeong Lim

Se Kwan Jeong

Young Tae Song

Seo Young Cho

Eun-Yeoung Choi

Hyun-Yong Go

Jin-Tae No

Chang-Woo Jung

Disclosed is an air conditioner. The disclosed air conditioner comprises: a main discharge port formed in a housing so as to discharge air introduced through a first inlet; a first guide discharge port configured to discharge a portion of air introduced through a second inlet such that the portion of the air introduced through the second inlet is mixed with the air discharged from the main discharge port; a second guide discharge port configured to discharge another portion of the air introduced through the second inlet such that the another portion of the air introduced through the second inlet is mixed with the air discharged from the main discharge port; and a distribution device configured to adjust the flow rate of the air discharged through the first guide discharge port and the second guide discharge port.

Air conditioner

An air conditioner includes a cabinet including an inlet port and a frame including an outlet port and coupled to the cabinet. A heat exchanger is disposed between the cabinet and the frame to exchange heat with air introduced into the inlet port and discharged to the outlet port. A blocking member is configured to connect the frame and the heat exchanger to prevent air heat-exchanged with the heat exchanger from leaking into the cabinet. This structure inhibits dew from being generated on the cabinet.

Disclosed herein is an air conditioner including a main outlet and a plurality of fine outlets provided in a main body, wherein at least one discharge guide for guiding air discharged by a blowing fan to one of the main outlet and the fine outlets is disposed in the inside of the main body to cool indoor space in various ways.

An air conditioner includes a housing, a heat exchanger arranged to exchange heat with air flowing into the housing, a blower fan arranged inside the housing for discharging air that has exchanged heat with the heat exchanger to the outside and a discharging plate having an opening formed to discharge air blown from the blower fan out of the housing, and a plurality of discharging holes formed to discharge air to surroundings of the opening, wherein the discharging plate is arranged to discharge the air that has exchanged heat by the heat exchanger out of the housing, and wherein the discharging plate is made of metal. By such configuration, air conditioner increase user satisfaction.

Disclosed herein is an air conditioner. The air conditioner includes a housing having an inlet port, a heat exchanger configured to exchange heat with air flowing in through the inlet port, a blowing unit configured to circulate air into or out of the housing, and a discharge unit rotatably provided relative to the housing, the discharge unit having a first outlet port formed in a portion of the outer circumferential surface to discharge the heat-exchanged air and a second outlet port formed in another portion of the outer circumferential surface to discharge the heat-exchanged air at different speed from the air discharged from the first outlet port.

An air conditioner to prevent fingers from being jammed therein during a closing operation of an opening and a method of controlling the same are provided. The air conditioner includes a housing in which an opening is formed, a door unit provided to be movable around the opening to open or close the opening, and at least one configured to control the door unit to stop at a position spaced a preset first distance from the opening during a closing operation of the door unit and control the closing operation of the door unit.

Air conditioner and method of controlling the same

A particle sensing device and an air conditioner including a sensor has a sensing path through which air passes, a flow path housing which accommodates the sensor and guides air, and a flow path switching device to all air suctioned from the outside is guided to the sensing path, or some of the air suctioned from the outside and moving flows back in an obliquely upward direction and flows into the sensing path.

Particle sensing device and air conditioner including the same

A semiconductor device is provided. The semiconductor includes a plurality of interlayer insulating layers and a plurality of gate electrodes alternately stacked in a first direction on a substrate. The plurality of interlayer insulating layers and the plurality of gate electrodes constitute a side surface extended in the first direction. A gate dielectric layer is disposed on the side surface. A channel pattern is disposed on the gate dielectric layer. The gate dielectric layer includes a protective pattern, a charge trap layer, and a tunneling layer. The protective pattern includes a portion disposed on a corresponding gate electrode of the plurality of gate electrodes. The charge trap layer is disposed on the protective pattern. The tunneling layer is disposed between the charge trap layer and the channel pattern. The protective pattern is denser than the charge trap layer.

Semiconductor device and method of fabricating the same

In a method of forming an oxide layer of a semiconductor process, a preliminary precursor flow is provided on a substrate in a deposition chamber to form a preliminary precursor layer, a precursor flow and a first oxidizing agent flow are provided on the preliminary precursor layer alternately and repeatedly to form precursor layers and first oxidizing agent layers alternately stacked on the preliminary precursor layer, and a second oxidizing agent flow is provided on the precursor layer or the first oxidizing agent layer alternately stacked to form a second oxidizing agent layer.

Methods of manufacturing semiconductor devices including an oxide layer

A non-volatile memory device having a vertical structure includes a semiconductor layer, a sidewall insulation layer extending in a vertical direction on the semiconductor layer, and having one or more protrusion regions, first control gate electrodes arranged in the vertical direction on the semiconductor layer, and respectively contacting one of portions of the sidewall insulation layer where the one or more protrusion regions are not formed and second control gate electrodes arranged in the vertical direction on the semiconductor layer, and respectively contacting one of the one or more protrusion regions.

Non-volatile memory device having a vertical structure and method of fabricating the same

A method of manufacturing a vertical memory device includes forming alternating and repeating insulating interlayers and sacrificial layers on a substrate, the sacrificial layers including polysilicon or amorphous silicon, forming channel holes through the insulating interlayers and the sacrificial layers, forming channels in the channel holes, etching portions of the insulating interlayers and the sacrificial layers between adjacent channels to form openings, removing the sacrificial layers to form gaps between the insulating interlayers, and forming gate lines in the gaps.

Vertical memory devices and methods of manufacturing the same

A vertical memory device includes a channel array, a charge storage layer structure, multiple gate electrodes and a dummy pattern array. The channel array includes multiple channels, each of which is formed on a first region of a substrate and is formed to extend in a first direction substantially perpendicular to a top surface of the substrate. The charge storage layer structure includes a tunnel insulation layer pattern, a charge storage layer pattern and a blocking layer pattern, which are sequentially formed on a sidewall of each channel in the second direction substantially parallel to the top surface of the substrate. The gate electrodes arranged on a sidewall of the charge storage layer structure and spaced apart from each other in the first direction. The dummy pattern array includes multiple dummy patterns, each of which is formed on a second region adjacent the first region of the substrate and is formed to extend in the first direction.

Memory devices and methods of manufacturing the same

According to example embodiments, a semiconductor device includes horizontal patterns stacked on a substrate. The horizontal patterns define an opening through the horizontal patterns. A first core pattern is in the opening. A second core pattern is in the opening on the first core pattern. A first active pattern is between the first core pattern and the horizontal patterns. A second active pattern containing a first element is between the second core pattern and the horizontal patterns. The second active pattern contains the first element at a higher concentration than a concentration of the first element in the second core pattern.

Semiconductor device including a first core pattern under a second core pattern

Growing community of inventors

Yongin-si, South Korea

Jin-Gyun Kim