Samsung Electronics Co., Ltd.

Seoul National University

Jin-gyoo Yoo

Cheol-soon Kim

Jung-Hoon Lee

Jung-hoon Lee

A nanowire memory device and a method of manufacturing the same are provided. A memory device includes: a substrate; a first electrode formed on the substrate; a first nanowire extending from an end of the first electrode; a second electrode formed over the first electrode to overlap the first electrode; and a second nanowire extending from an end of the second electrode corresponding to the end of the first electrode in the same direction as the first nanowire, wherein an insulating layer exists between the first and second electrodes.

Nanowire memory device and method of manufacturing the same

A method of fabricating a nanowire memory device, and a system of controlling nanowire formation used in the same method are provided. In the method of fabricating a nanowire memory device which includes a substrate; an electrode formed on the substrate and insulated from the substrate; and a nanowire having its one end connected with the electrode and formed at a given length, the method comprises: forming an electrode and a dummy electrode to be paired with the electrode on the substrate; forming the nanowire between the electrode and the dummy electrode while measuring a current flowing between the electrode and the dummy electrode, and cutting power applied between the electrode and the dummy electrode when the current measured is a given value; and removing the dummy electrode.

Method of fabricating nanowire memory device and system of controlling nanowire formation used in the same

Provided is a spindle motor for a disk drive including a base, a sleeve fixed on the base and having a space portion therein, and a shaft rotatably installed in the space portion of the sleeve and having a shape such that a diameter of the shaft decreases from a middle portion of the shaft in a lengthwise direction to both ends thereof.

Growing community of inventors

Yongin-si, South Korea

Jin-gyoo Yoo