Hyundai Electronics Industries Co. Ltd.

Lg Innotek Co., Ltd.

Jin Gwan Shin

Ki Seog Kim

Keun Woo Lee

Sang Hoan Chang

Jin Hee Kim

Sung Kee Park

Sang Soo Kim

Seoung Ouk Choi

Jae Yun Choi

Young Chun Lee

Keon Soo Shim

The present disclosure relates to a lighting device and a vehicular lamp including the same. A lens member is provided between a shielding module and a light guide member. Through a non-air-gap structure in which a separation portion between components is removed, diversity of mechanism designs may be secured, and at the same time, light efficiency may be improved. A light emitting direction of a light emitting element forms an inclination angle with a light emitting surface of a light source module, so that a deterioration phenomenon of a light guide member formed of resin may be removed, and a light beam emitted through a first light guide member is emitted as an indirect light beam.

Lighting device and vehicular lamp comprising same

There is disclosed a method of monitoring a source contact in a flash memory by which whether a source contact having a narrow contact area contacts or not can be easily monitored using over-erase cell characteristic in a flash cell, in a flash memory device in which a source line is formed by a local interconnection method. In the present invention, in order to monitor a contact state at source contacts, the same voltage to the erase condition of a cell is applied to respective terminals (VG terminal, VD terminal, VS terminal and VSS terminal) wherein all the electrons existing at a floating gate in all the cells connected to the VS terminal and VSS terminal become turned on so that they can be over-erased. On the other hands, as electrons existing at the floating gate in two cells shared by any source contacts having a defect contact are not erased, the cells remain turn-off. In this state, if test voltages (VG&equals;0V, VD<5V, VS&equals;float, VSS&equals; ground) are applied, the current flow from the VD terminal to the VSS terminal is broken in the portion having a contact defect, thus allowing the contact state of the source contacts to be monitored.

Method of monitoring a source contact in a flash memory

There is disclosed a multi-bit flash memory cell and programming method using the same. In order to solve the problems that the size of a cell per unit is increased, reliability of a device is degraded due to a high operating voltage and a circuit necessary for driving the cell becomes complicated, the multi-bit flash memory cell and programming method using the same according to the present invention stores information of various states, by interchangeably programs a drain and a source in a cell array of virtual ground type, in a structure in which that two types of cells look like connected serially by doping a floating gate in a flash memory cell with two regions of a N type and a P to type.

Multi-bit flash memory cell and programming method using the same

There is disclosed a method of manufacturing a flash memory cell comprising the steps of forming a first ploysilicon layer pattern then forms a cell source; patterning a second polysilicon layer so that a gate electrode can be formed while the portion of the first polysilicon pattern where the cell drain will be formed is opened; forming a transistor at peripheral circuit area by performing ion injection process and a thermal process; forming a floating gate and a control gate by performing a self aligned etching process; and forming a cell source line and a cell drain by injecting cell source/drain ions. The flash memory cell formed thus has an increased coupling ratio since the control gate is formed to surround the floating gate, and also has an improved hot carrier reliability characteristic both at the peripheral circuit and the cell area upon operation of the device since the cell drain is formed after the thermal process for forming the peripheral circuit source and drain.

Method of manufacturing a flash memory device

The present invention relates to a method of forming a gate in a stack gate flash EEPROM cell. In order to preventing a lateral bird's beak from occurring in an ONO dielectric layer during a reoxidation process to be performed after a formation of a cell gate having a stack structure formed by stacking a floating gate, an ONO dielectric layer and a control gate, an oxide layer and a nitride layer are sequentially formed on an entire structure before the reoxidation and after a formation of the cell gate. The oxide layer serves to reduce a stress in depositing the nitride layer, and the nitride layer serves to prevent an occurrence of the lateral bird's beak of the ONO dielectric layer during the reoxidation process. Accordingly, the present invention prevents the lateral bird's beak of the ONO dielectric layer, thereby improving a speed of cell erase operation.

Growing community of inventors

Seoul, South Korea

Jin Gwan Shin