Industrial Technology Research Institute

National Central University

Jin-Fu Li

Chih-Yen Lo

Ding-Ming Kwai

Yun-Chao Yu

Kuan-Te Wu

Che-Wei Chou

Jenn-Shiang Lai

Han-Yu Wu

Chi-Chun Yang

Yong-Xiao Chen

A memory control circuit, coupled to a multi-channel memory, includes a plurality of channel controllers coupled to respective channel memories of the multi-channel memory, and a built-in self-test (BIST) circuit. The BIST circuit includes a BIST controller and a plurality of command index registers which store respective command indexes related to the channel controllers. The BIST controller receives notification from at least two channel controllers of the channel controllers, which indicates that the at least two channel controllers complete respective current test commands. When the BIST controller arbitrates, the BIST controller selects at least a channel controller from the at least two channel controllers which send the notification, and sends respective next test command(s) to the selected at least one channel controller based on the respective command index(es) of the selected at least one channel controller.

Memory control circuit and memory test method

A delay measurement circuit includes a transporting path selector, first and second delay measurement devices, and a controller. The delay measurement circuit forms a plurality of transporting loops through two of a first reference transporting conductive wire, a second reference transporting conductive wire, and a tested transporting conductive wire according to a control signal. The first delay measurement device respectively measures part of the transporting loops to obtain a plurality first transporting delays. The second delay measurement device respectively measures part of the transporting loops to obtain a plurality second transporting delays. The controller generates the control signal, and obtains a transporting delay of the tested transporting conductive wire according to the first transporting delays and the second transporting delays.

Delay measurement circuit and measuring method thereof

A fault-tolerance through silicon via (TSV) interface is disposed in a three-dimensional random access memory (3-D RAM) with N memory layers and M data access path sets, and each of the memory layers containing K memory arrays, and each of the data access path sets containing a plurality of TSV paths connecting to the memory layers. The fault-tolerance TSV interface includes a path controlling unit and a processing unit. The path controlling unit detects and controls the data access path sets. When a fault occurs in any data access path set connecting to a memory layer, the processing unit provides at least two different fault-tolerance access configurations. In each of the fault-tolerance access configurations, &#x3bc; data access path sets are enabled to access all K memory arrays in the corresponding memory layer, where 0&#x3c;&#x3bc;&#x3c;M.

Fault-tolerance through silicon via interface and controlling method thereof

A three-dimensional (3-D) memory includes: multiple memory dies, each having at least one memory bank and a built-in self-test (BIST) circuit; and a plurality of channels, for electrically connecting the memory dies. In a synchronous test, one of the memory dies is selected as a master die. The BIST circuit of the master die sends an enable signal via the channels to the memory dies under test. The BIST circuit in each of the memory dies is for testing memory banks on the same memory die or on different memory dies.

3-D memory and built-in self-test circuit thereof

Growing community of inventors

Taoyuan, Taiwan

Jin-Fu Li