International Business Machines Corporation

Globalfoundries Inc.

Freescale Semiconductor,inc.

Globalfoundries U.S. 2 LLC

Jin Cai

Tak H Ning

Jeng-Bang Yau

Kevin K Chan

Wilfried Haensch

Robert H Dennard

Ali Khakifirooz

Amlan Majumdar

Effendi Leobandung

Sufi Zafar

Christopher Peter D'Emic

Kangguo Cheng

Ghavam G Shahidi

Robert Russell Robison

Leland Chang

Marwan H Khater

Jean-Olivier Plouchart

Ramachandran Muralidhar

Steven John Koester

Dae-Gyu Park

Devendra K Sadana

Bruce Bennett Doris

Bahman Hekmatshoartabari

Ning Li

Jeffrey W Sleight

Josephine B Chang

Dechao Guo

Ping-Chuan Wang

Christian Lavoie

Chengwen Pei

Martin Michael Frank

Zhen Zhang

Eduard Albert Cartier

Barry P Linder

Zhibin Ren

Brian L Ji

Wenjuan Zhu

Joonah Yoon

Yanqing Wu

Win K Luk

Chung H Lam

Toshiharu Furukawa

Xiangdong Chen

Jeffrey Bowman Johnson

Pranita Kulkarni

Pranita Kerber

Qiqing Christine Ouyang

Matthew Joseph BrightSky

Xinlin Wang

Wing Kin Luk

John Matthew Safran

SangBum Kim

Robert H Dannard

After forming a trench extending through an insulator layer and an underlying top semiconductor portion that is comprised of a first semiconductor material and a dopant of a first conductivity type to define an emitter and a collector on opposite sides of the trench in the top semiconductor portion, an intrinsic base comprising a second semiconductor material having a bandgap less than a bandgap of the first semiconductor material and a dopant of a second conductivity type opposite the first conductivity type is formed in a lower portion the trench by selective epitaxial growth. The intrinsic base protrudes above the top semiconductor portion and is laterally surrounded by entire top semiconductor portion and a portion of the insulator layer. An extrinsic base is then formed on top of the intrinsic base to fill a remaining volume of the trench by a deposition process.

Semiconductor-on-insulator lateral heterojunction bipolar transistor having epitaxially grown intrinsic base and deposited extrinsic base

A radio frequency fully depleted silicon on insulator (RF-FDSOI) device and method of fabrication are provided. A silicon wafer for digital circuits is constructed using fully depleted silicon on insulator technology having a thin buried oxide layer. Localized areas of the silicon wafer are constructed for radio frequency circuits and/or passive devices. The silicon wafer has a silicon substrate having a resistivity greater than 1 K&#x3a9;&#xb7;cm. The localized areas of the silicon wafer may include a trap rich layer implanted underneath a thin buried oxide layer. The localized areas of the silicon wafer may include a buried oxide layer that is thicker than the thin buried oxide layer. The thicker oxide layer is between 20 and 2000 nm thick. The localized areas of the silicon wafer may include a trap rich layer implanted underneath the thicker buried oxide layer.

System on chip fully-depleted silicon on insulator with RF and MM-wave integrated functions

A method of forming a semiconductor structure includes depositing a high-k dielectric layer within a first recess located between sidewall spacers of a first CMOS device and within a second recess located between sidewall spacers of a second CMOS device. A dummy titanium nitride layer is deposited on the high-k dielectric layer. Next, the high-k dielectric layer and the dummy titanium nitride layer are removed from the second recess in the second CMOS device. A silicon cap layer is deposited within the first recess and the second recess, the silicon cap layer is located above the high-k dielectric layer and dummy titanium nitride layer in the first CMOS device. Subsequently, dopants are implanted into the silicon cap layer located in the second recess of the second CMOS device.

Lateral BiCMOS replacement metal gate

System on chip fully-depleted silicon on insulator with rf and mm-wave integrated functions

After forming a first trench extending through a top semiconductor layer and a buried insulator layer and into a handle substrate of a semiconductor-on-insulator (SOI) substrate, a dielectric waveguide material stack including a lower dielectric cladding layer, a core layer and an upper dielectric cladding layer is formed within the first trench. Next, at least one lateral bipolar junction transistor (BJT), which can be a PNP BJT, an NPN BJT or a pair of complementary PNP BJT and NPN BJT, is formed in a remaining portion of the top semiconductor layer. After forming a second trench extending through the dielectric waveguide material stack to re-expose a portion of a bottom surface of the first trench, a laser diode is formed in the second trench.

Monolithic integrated photonics with lateral bipolar and BiCMOS

An exemplary biosensor sensor for detecting the presence of a biological material includes an SOI substrate, a BJT formed on at least a portion of the substrate, and a sensing structure formed on at least a portion of an upper surface of the BJT. The BJT includes an emitter region, a collector region and a self-aligned epitaxially grown intrinsic base region laterally adjacent to the emitter and collector regions. The sensing structure includes an opening, centered above and exposing the intrinsic base region, and at least one dielectric layer formed in the opening and contacting at least a portion of the intrinsic base region. The dielectric layer is configured to respond to charges in biological molecules.

Ultra-sensitive biosensor based on lateral bipolar junction transistor having self-aligned epitaxially grown base

A method of forming a semiconductor structure includes providing an emitter and a collector on a surface of an insulator layer. The emitter and the collector are spaced apart and have a doping of a first conductivity type. An intrinsic base is formed between the emitter and the collector and on the insulator layer by epitaxially growing the intrinsic base from at least a vertical surface of the emitter and a vertical surface of the collector. The intrinsic base has a doping of a second conductivity type opposite to the first conductivity type, and a first heterojunction exists between the emitter and the intrinsic base and a second heterojunction exists between the collector and the intrinsic base.

Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having an epitaxially grown base

A semiconductor device including a charge storage element present in a buried dielectric layer of the substrate on which the semiconductor device is formed. Charge injection may be used to introduce charge to the charge storage element of the buried dielectric layer that is present within the substrate. The charge that is injected to the charge storage element may be used to adjust the threshold voltage (Vt) of each of the semiconductor devices within an array of semiconductor devices that are present on the substrate.

Structure and method for adjusting threshold voltage of the array of transistors

An exemplary biosensor sensor for detecting the presence of a biological material includes an SOI substrate, a lateral BJT formed on at least a portion of the substrate, and a sensing structure formed on at least a portion of an upper surface of the BJT. The BJT includes an emitter region, a collector region and a base region, the base region being formed between the emitter and collector regions and laterally adjacent thereto. The sensing structure includes at least one dielectric layer contacting at least a portion of the base region. The dielectric layer forms a receptacle for confining a biological molecule being tested and is configured to respond to charges in biological molecules, the charges being converted to a sensing signal by the BJT.

An integrated sensor for detecting the presence of an environmental material and/or condition includes a sensing structure and first and second bipolar junction transistors (BJTs). The first BJT has a base that is electrically coupled with the sensing structure and is configured to generate an output signal indicative of a change in stored charge in the sensing structure. The second BJT is configured to amplify the output signal of the first bipolar junction transistor. The first and second BJTs and the sensing structure are monolithically formed a common substrate.

Lateral bipolar sensor with sensing signal amplification

Lateral SOI bipolar transistor structures are provided including an intrinsic base semiconductor material portion in which all surfaces of the intrinsic base not forming an interface with either a collector semiconductor material portion or an emitter semiconductor material portion, contain an extrinsic base semiconductor material portion. Each extrinsic base semiconductor material portion is of the same conductivity type as that of the intrinsic base semiconductor material portion, yet each extrinsic base semiconductor material portion has a higher dopant concentration than the intrinsic base semiconductor material portion. The intrinsic base semiconductor material portion of the lateral SOI bipolar transistors of the present application does not have any interface with surrounding insulator material layers. As such, any potential charge build-up in the surrounding insulator material layers is shielded by the extrinsic base semiconductor material portions.

SOI lateral bipolar transistors having surrounding extrinsic base portions

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Jin Cai