Samsung Electronics Co., Ltd.

Other

Sungkyunkwan University

Acornsoft Co., Ltd.

Neubility

Korea Institute of Science and Technology

Wiznet Co., Ltd.

Jin Bum Kim

Seung Hun Lee

Tae Jin Park

Dong Suk Shin

Il Gyou Shin

Seok Hoon Kim

Gyeom Kim

Sun Jung Kim

Kang Hun Moon

Kyung In Choi

Cho Eun Lee

Jeong Ho Yoo

Sang Min Lee

Hyun Jung Lee

Yang Xu

Jae Mun Kim

Da Hye Kim

Hyun Gon Kim

Ki Joon Seong

Hyoung Sub Kim

Chul Kyu Kim

Dong Woo Kim

Jin Yong Kim

Jong Min Lee

Sang Moon Lee

Sujin Jung

Choeun Lee

Dong Chan Suh

Kwan Heum Lee

Do Y Choi

Munhyeon Kim

Kyung Yub Jeon

Gyo Chang Keum

Bon Young Koo

Haegeon Jung

Chang Woo Noh

Sung Man Whang

Si Hyung Lee

Eun Kyoung Bang

Jae Myung Choe

Dong Myoung Kim

Hong Bae Park

Ha Kyu Seong

Hae Jun Yu

Bong Jun Hur

Seong Heum Choi

Kyung Hee Kim

Yeon Seop Kim

Maria Toledano Lu Que

Dong Muk Lee

There is provided a semiconductor device including an active pattern which includes a lower pattern extending in a first direction and a plurality of sheet patterns spaced apart from the lower pattern in a second direction on a substrate, the lower pattern including a protruding pattern protruding from the substrate in the second direction, and a capping pattern being in contact with the protruding pattern on the protruding pattern, a first gate structure and a second gate structure which are disposed on the lower pattern and spaced apart from each other in the first direction, and a source/drain pattern which is disposed on the lower pattern and in contact with the sheet pattern, wherein a thickness of the capping pattern in a portion that overlaps the first gate structure is different from a thickness of the capping pattern in a portion that overlaps the second gate structure.

Semiconductor device and method for fabricating the same

The present invention relates to an installation technology of components of an edge cloud, and particularly, to a system and a method of edge cloud building for high-speed installation of components of an edge cloud, which can reduce generation and setting operation hours of individual components by automating installation of individual components of the edge cloud. To this end, in the edge cloud building system according to the present invention as a edge cloud building system for high-speed installation of components of an edge cloud, hierarchical components (IaaS, KaaS, PaaS) of an edge cloud are installed by using a server node image and a PaaS component image, and then detailed setting of the hierarchical components is performed by using a declarative script.

Edge cloud building system and method for high-speed installation of components of edge cloud

A semiconductor device includes a semiconductor substrate having first and second regions therein, a first lower semiconductor pattern, which protrudes from the semiconductor substrate in the first region and extends in a first direction across the semiconductor substrate, and a first gate electrode, which extends across the first lower semiconductor pattern and the semiconductor substrate in a second direction. A plurality of semiconductor sheet patterns are provided, which are spaced apart from each other in a third direction to thereby define a vertical stack of semiconductor sheet patterns, on the first lower semiconductor pattern. A first gate insulating film is provided, which separates the plurality of semiconductor sheet patterns from the first gate electrode. A second lower semiconductor pattern is provided, which protrudes from the semiconductor substrate in the second region. A plurality of wire patterns are provided, which are spaced apart from each other on the second lower semiconductor pattern. A second gate insulating film is wrapped around each of the plurality of wire patterns.

Semiconductor devices having highly integrated sheet and wire patterns therein

Provided is a distributed and associative container platform system which has an advantage of providing flexible movement of services and infinite extension of computing resources by interconnecting regionally distributed multiple container platforms and enhancing security.

Distributed and associative container platform system

Robot for delivery of goods

Example semiconductor devices and methods for fabricating a semiconductor device are disclosed. An example device may include a substrate, a first semiconductor pattern spaced apart from the substrate, a first antioxidant pattern extending along a bottom surface of the first semiconductor pattern and spaced apart from the substrate, and a field insulating film on the substrate. The insulating film may cover at least a part of a side wall of the first semiconductor pattern. The first antioxidant pattern may include a first semiconductor material film doped with a first impurity.

A semiconductor device includes a substrate, a gate electrode on the substrate, a gate spacer on a sidewall of the gate electrode, an active pattern penetrating the gate electrode and the gate spacer, and an epitaxial pattern contacting the active pattern and the gate spacer. The gate electrode extends in a first direction. The gate spacer includes a semiconductor material layer. The active pattern extends in a second direction crossing the first direction.

Semiconductor device including non-sacrificial gate spacers and method of fabricating the same

A semiconductor device includes a gate electrode extending in a first direction on a substrate, a first active pattern extending in a second direction intersecting the first direction on the substrate to penetrate the gate electrode, the first active pattern including germanium, an epitaxial pattern on a side wall of the gate electrode, a first semiconductor oxide layer between the first active pattern and the gate electrode, and including a first semiconductor material, and a second semiconductor oxide layer between the gate electrode and the epitaxial pattern, and including a second semiconductor material. A concentration of germanium of the first semiconductor material may be less than a concentration of germanium of the first active pattern, and the concentration of germanium of the first semiconductor material may be different from a concentration of germanium of the second semiconductor material.

Semiconductor device having germanium containing active pattern and method for fabricating the same

There is provided a semiconductor device capable of enhancing short channel effect by forming a carbon-containing semiconductor pattern in a source/drain region. The semiconductor device includes a first gate electrode and a second gate electrode spaced apart from each other on a fin-type pattern, a recess formed in the fin-type pattern between the first gate electrode and the second gate electrode, and a semiconductor pattern including a lower semiconductor film formed along a profile of the recess and an upper semiconductor film on the lower semiconductor film, wherein the lower semiconductor film includes a lower epitaxial layer and an upper epitaxial layer sequentially formed on the fin-type pattern, and a carbon concentration of the upper epitaxial layer is greater than a carbon concentration of the lower epitaxial layer.

A semiconductor device and a method of manufacturing a semiconductor device, the semiconductor device including a channel pattern on a substrate, the channel pattern extending in a first direction; a gate pattern on the substrate, the gate pattern extending in a second direction crossing the first direction and surrounding the channel pattern; and an interface layer between the channel pattern and the gate pattern, the interface layer being formed on at least one surface of an upper surface and a lower surface of the channel pattern.

Semiconductor device including channel pattern and manufacturing method thereof

Provided herein are a novel Zn-DPA complex compound and an siRNA delivery system including the same as a transporter, the Zn-DPA complex compound including: a phosphate-directing functional part of zinc (II)-dipicolylamine ('Zn-DPA'); a cell membrane-directing functional part; and a linker part that links the phosphate-directing functional part and the cell membrane-directing functional part. The Zn-DPA complex compound has low toxicity and efficiently delivers siRNA to cells, thereby useful in various ways for various studies and diagnosis and treatment of diseases, which use siRNA.

Zn-DPA complex compounds and siRNA delivery systems containing the same

A method of fabricating a semiconductor device is provided. The method includes forming a dummy gate electrode on a substrate, forming a trench on a side surface of the dummy gate electrode, performing a bake process of removing an impurity from the trench and forming a source/drain in the trench, wherein the bake process comprises a first stage and a second stage following the first stage, an air pressure in which the substrate is disposed during the first stage is different from an air pressure in which the substrate is disposed during the second stage, and the bake process is performed while the substrate is on a stage rotating the substrate, wherein a revolution per minute (RPM) of the substrate during the first stage is different from a revolution per minute (RPM) of the substrate during the second stage.

Method of fabricating semiconductor device

A semiconductor device includes: a substrate having an active region; a gate structure disposed in the active region; source/drain regions respectively formed within portions of the active region disposed on both sides of the gate structure; a metal silicide layer disposed on a surface of each of the source/drain regions; and contact plugs disposed on the source/drain regions and electrically connected to the source/drain regions through the metal silicide layer, respectively. The metal silicide layer is formed so as to have a monocrystalline structure.

Semiconductor device

Growing community of inventors

Seoul, South Korea

Jin Bum Kim