Samsung Electronics Co., Ltd.

Dongjin Semichem Co., Ltd.

Jin-A Ryu

Boo-deuk Kim

Young-ho Kim

Jae-Ho Kim

Kyoung-mi Kim

Hyo-Jin Yun

Chang-Ho Lee

Young-Ho Kim

Dong-Won Kim

Myung-Sun Kim

Hyun-Jin Kim

Yool Kang

Jae-ho Kim

Pil-Kwon Jun

Jung-hoon Kim

Jung-Dae Park

Jung-Youl Lee

Soo-Kyung Kim

Kyung-Lyul Moon

Jae-Hee Choi

Ji-Man Park

Man-Ho Han

Nae-ry Yu

Se-kyung Baek

Ji-Yun Ham

Yu-Jin Jeoung

A method of forming a pattern is disclosed. The method includes preparing a composition that includes a solvent and a polymer including a repeating unit in which at least one isocyanurate unit having a first structure is connected to another isocyanurate unit having a second structure different from the first structure; applying the composition on a substrate to form an underlayer; forming a photoresist layer on the underlayer; etching the photoresist layer to form a photoresist pattern; and patterning the substrate using the photoresist pattern.

Methods of forming patterns using compositions for an underlayer of photoresist

In a method of detecting inhomogeneity of a layer, an incident light may be irradiated to at least two regions of the layer at a first incident angle position. First reflected lights reflected from the two regions of the layer may be sensed. The incident light may be irradiated to the at least two regions of the layer at a second incident angle position. Second reflected lights reflected from the two regions of the layer may be sensed. The first reflected lights and the second reflected lights may be compared with each other to obtain the inhomogeneity of the layer. Thus, the layer having a spot may be found.

Methods of detecting inhomogeneity of a layer and apparatus for performing the same

A photoresist composition for fabricating a probe array is provided. The photoresist composition includes a photoacid generator having an onium salt and an i-line reactive sensitizer.

Photoresist composition for fabricating probe array, method of fabricating probe array using the photoresist composition, composition for photosensitive type developed bottom anti-reflective coating, fabricating method of patterns using the same and fabricating method of semiconductor device using the same

In polymers for an anti-reflective coating, compositions for an anti-reflective coating and methods of forming a pattern of a semiconductor device using the same, the compositions for an anti-reflective coating include a polymer that includes a first repeating unit having a basic side group, a second repeating unit having a light-absorbing group, and a third repeating unit having a cross-linkable group; a photoacid generator; a cross-linking agent; and a solvent. The polymer for the anti-reflective coating, which may have a basic side group chemically bound to a backbone of the polymer, may properly adjust diffusion of an acid in an anti-reflective coating layer to improve the profile of a pattern.

Methods of forming a pattern of a semiconductor device

In a photoresist composition for a semiconductor manufacturing process and a method of forming a photoresist pattern using the photoresist composition, the photoresist composition includes an organic dispersing agent for dispersing acid (H+). The photoresist film may have enough spaces among photosensitive polymers so that acid may be dispersed sufficiently in an exposure process. Thus, a photoresist pattern may be easily formed in a defocus region. Defects in a semiconductor device may be reduced and a productivity of the semiconductor manufacturing process may be enhanced.

Photoresist composition and method of forming a photoresist pattern using the same

An adhesive compound for use during the formation of a photoresist film represented by the following chemical formula,wherein R represents a photoacid generator is disclosed.

Adhesive compound and method for forming photoresist pattern using the same

Growing community of inventors

Hwaseong-si, South Korea

Jin-A Ryu