Oxford Brookes University

University of Bristol

University of Rome Tor Vergata

Jimson Mathew

Abusaleh Jabir

Dhiraj Kumar Pradhan

Adedotun Adeyemo

Marco Ottavi

Eugenio Martinelli

Corrado Di Natale

Mahesh Poolakkaparambil

Jawar Singh

Dhiraj K Pradhan

A sensor comprises a plurality of sensor elements arranged in an array. Each sensor element is memristive and has an electrical resistance characteristic related to exposure to a species to be sensed. The sensor elements are arranged to be connectable such that at least one sensor element is connected in parallel with at least one other sensor element. By using appropriate connections, the array of sensor elements can be read.

Memristor based sensor

Error-correcting circuit includes: component generating a first output from first and second inputs; error detector generating an error flag indicative of whether or not an error is detected in the first output, based on the first output, and the first and second inputs; correction generator generating a correcting output after a first time period beginning with a timing event, based on the first output, and the first and second inputs; and output generator generating an output after a second time period beginning with the timing event. If the error flag indicates a detected error then the second time period may be longer than the first time period, otherwise it may be not longer, and the error-correcting circuit output may include a combination of the first output and the correcting output whereby the detected error is corrected, otherwise the error-correcting circuit output may correspond directly to the first output.

Digital error correction

A static random access memory ('SRAM') comprising: a pair of inverters each having an input and an output; a cross-coupling path coupling the input of a first inverter to the output of a second inverter; and a transmission gate, wherein the transmission gate comprises a p-channel transistor coupling the input of the second inverter to the output of the first inverter; and an n-channel transistor coupling the input of the second inverter to the output of the first inverter in parallel with the p-channel transistor. In another embodiment, the SRAM comprises a first inverter having a supply voltage node connected to a supply voltage, and a ground node connected to ground; a second inverter cross-coupled with the first inverter and having a supply voltage node connected to a supply voltage, and a ground node; and a switch selectively connecting and disconnecting the ground node of the second inverter to ground.

Static random access memory

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Bristol, United Kingdom

Jimson Mathew