Rigaku Corporation

Osmic, Inc.

Jimpei Harada

Kazuhiko Omote

Seiichi Hayashi

Tetsuya Ozawa

Boris Verman

Tetsuo Kikuchi

Masaru Kuribayashi

Katsuhiko Inaba

Sadayuki Takahashi

Ryouichi Yokoyama

Kamihisa Endo

Ryoichi Yokoyama

A diffraction condition simulation device capable of calculating the UB matrix and the rotation matrix R and also their multiplication RUB, thereby obtaining and displaying any Bragg reflection conditions of any Bragg reflections desired by an operator of said device. The Bragg reflection conditions are useful for structure analysis and structure evaluation of any crystal samples.

Diffraction condition simulation device, diffraction measurement system, and crystal analysis system

An x-ray beam conditioning system with a first diffractive element and a second diffractive element. The two diffractive elements are arranged in a sequential configuration, and one of the diffractive elements is a crystal. The other diffractive element may be a multilayer optic.

Beam conditioning system with sequential optic

The present invention provides an x-ray beam conditioning system with a Kirkpatrick-Baez diffractive optic including two optical elements, of which one of the optical elements is a crystal. The elements are arranged in a side-by-side configuration. The crystal can be a perfect crystal. One or both diffractive elements can be mosaic crystals. One element can be a multilayer optic. For example, the multilayer optic can be an elliptical mirror or a parabolic mirror with graded d-spacing. The graded d-spacing can be either lateral grading or depth grading, or both.

Beam conditioning system

The thin film deposition system for depositing a thin film on the surface of substrates disposed in a sealed thin film deposition furnace comprises a measuring unit at a site communicating with the thin film deposition furnace, the measuring unit comprising a thin film deposition sample substrate for allowing a thin film substance flowing in from the thin film deposition furnace to adhere while X-ray incidence and extraction windows being provided on the side walls of the measuring unit, wherein X-ray is irradiated on the thin film deposition sample substrate in the measuring unit through the X-ray incidence window by means of a thin film measuring unit provided at the outside of the thin film deposition furnace, and the X-ray reflected from the thin film deposition sample substrate is sensed through the X-ray extraction window.

Method and apparatus for measuring thin film, and thin film deposition system

Apparatus for X-ray analysis has a combination of a rotating target X-ray tube and a composite monochromator. The composite monochromator has a first and a second elliptic monochromators joined with each other side by side. Each of the elliptic monochromators has a first focal point at which an X-ray focal spot on a target of the X-ray tube is disposed. Each of the elliptic monochromators has a synthetic multilayered thin film whose d-spacing varies continuously along an elliptic-arc. The shortest distance between the X-ray focal spot and the composite monochromator is set to 40 to 100 mm. Under the shortest distance condition, the effective focal spot size on the target is set to 40 to 100 micrometers to obtain the maximum X-ray intensity on a sample to be analyzed.

Apparatus for X-ray analysis and apparatus for supplying X-rays

The present invention provides a new fluorescent X-ray analyzing method and an apparatus thereof which is capable of performing, with great precision, quantitative analysis and qualitative analysis for an atomic species generating fluorescent X-rays of not only a symmetrical energy spectrum but also an asymmetrical energy spectrum, wherein fluorescent X-rays generated from a sample by irradiation of X-rays or particle beams are measured as an energy spectrum, and profile fitting to the measured energy spectrum is performed by using an asymmetrical profile function which can express a symmetrical and an asymmetrical energy spectrum in accordance with an asymmetrical factor.

Fluorescent x-ray analyzing method and apprartus

An incident monochromator and a microfocus X-ray source with an apparent focal spot size of less than 30 micrometers are combined so that the X-ray source can be close to the monochromator and the intensity of X-rays focused on a sample is greatly increased. A side-by-side composite monochromator is arranged between the X-ray source and the sample. The composite monochromator has a first and a second elliptic monochromators each having a synthetic multilayered thin film with graded d-spacing. The first elliptic monochromator has one side which is connected to one side of the second elliptic monochromator. A preferable apparent focal spot size D of the X-ray source may be 10 micrometers. Because the invention provides a high focusing efficiency for X-rays, it is not required to use a high-power X-ray tube. The X-ray tube according to the invention, moreover, may have a stationary-anode, whose power may be about 7 Watts.

Apparatus for x-ray analysis

A novel method and novel apparatus that are capable of selecting, with a computer, reference Bragg reflections pc1 and pc2, which form a basis for determination of the crystallographic orientation of a crystal sample by the two-reflection method, automatically and easily and accurately, wherein; firstly, x-ray intensities and diffraction conditions of all Bragg reflections which are measurable are calculated using the crystallographic information, secondly, a weight-point according to both the x-ray intensity and the angle between the sample normal and the scattering vector is obtained for each of the Bragg reflections, thirdly, two Bragg reflections having the two largest weight-points are selected as the reference Bragg reflections pc1 and pc2, respectively.

Growing community of inventors

Tokyo, Japan

Jimpei Harada