Samsung Electronics Co., Ltd.

Jimo Gu

Byoungil Lee

Yujin Seo

Subin Kang

Sungmin Hwang

Bumkyu Kang

A semiconductor device includes a substrate, a lower stack structure on the substrate and including lower gate electrodes stacked apart from each other, an upper stack structure on the lower stack structure and including upper gate electrodes stacked apart from each other, a lower channel structure penetrating through the lower stack structure and including a lower channel layer, and a lower channel insulating layer on the lower channel layer the lower channel insulating layer surrounding a lower slit, and an upper channel structure penetrating through the upper stack structure and including an upper channel layer and an upper channel insulating layer on the upper channel layer, the upper channel insulating layer surrounding an upper slit. A width of the lower slit is greater than a width of the upper slit, and a thickness of the lower channel insulating layer is greater than a thickness of the upper channel insulating layer.

Semiconductor devices and data storage system including the same

A vertical memory device includes channels on a substrate, a channel connecting pattern, gate electrodes, and an etch stop pattern and a blocking pattern sequentially stacked. The channels extend in a first direction perpendicular to an upper surface of the substrate. The channel connecting pattern extends in a second direction parallel to the upper surface of the substrate to cover outer sidewalls of the channels. The gate electrodes are spaced apart from each other in the first direction on the channel connecting pattern, and extend in the second direction to surround the channels. The etch stop pattern and the blocking pattern are sequentially stacked in a third direction parallel to the upper surface of the substrate and crossing the second direction on an end portion of the channel connecting pattern in the third direction, and include different materials from each other.

Methods of manufacturing vertical memory devices

Vertical memory devices and methods of manufacturing the same

Growing community of inventors

Suwon-si, South Korea

Jimo Gu