Taiwan Semiconductor Manufacturing Comp. Ltd.

Jimmy Lee

Yih Wang

Chia-En Huang

Perng-Fei Yuh

Gu-Huan Li

Tung-Cheng Chang

A memory device and a method of operating a memory device are disclosed. In one aspect, the memory device includes a plurality of non-volatile memory cells, each of the plurality of non-volatile memory cells is operatively coupled to a word line, a gate control line, and a bit line. Each of the plurality of non-volatile memory cells comprises a first transistor, a second transistor, a first diode-connected transistor, and a capacitor. The first transistor, second transistor, first diode-connected transistor are coupled in series, with the capacitor having a first terminal connected to a common node between the first diode-connected transistor and the second transistor.

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Hsinchu, Taiwan

Jimmy Lee