Brewer Science, Inc.

Jim D Meador

Xie Shao

Terry Lowell Brewer

Tony D Flaim

Vandana Krishnamurthy

Douglas J Guerrero

Ramil-Marcelo L Mercado

Earnest C Murphy

Kelly A Nowak

Gu Xu

Mandar R Bhave

Shreeram V Deshpande

Joyce A Lowes

Hao Xu

Michelle Fowler

Mariya Nagatkina

Doug Holmes

The present invention provides methods of fabricating microelectronics structures and the resulting structures formed thereby using a dual-layer, light-sensitive, wet-developable bottom anti-reflective coating stack to reduce reflectance from the substrate during exposure. The invention provides dye-filled and dye-attached compositions for use in the anti-reflective coatings. The anti-reflective coatings are thermally crosslinkable and photochemically decrosslinkable. The bottom anti-reflective coating stack has gradient optical properties and develops at the same time as the photoresist. The method and structure are particularly suited to high-NA lithography processes.

Dual-layer light-sensitive developer-soluble bottom anti-reflective coatings for 193-nm lithography

Acid-sensitive, developer-soluble bottom anti-reflective coating compositions are provided, along with methods of using such compositions and microelectronic structures formed thereof. The compositions preferably comprise a crosslinkable polymer dissolved or dispersed in a solvent system. The polymer preferably comprises recurring monomeric units having adamantyl groups. The compositions also preferably comprise a crosslinker, such as a vinyl ether crosslinking agent, dispersed or dissolved in the solvent system with the polymer. In some embodiments, the composition can also comprise a photoacid generator (PAG) and/or a quencher. The bottom anti-reflective coating compositions are thermally crosslinkable, but can be decrosslinked in the presence of an acid to be rendered developer soluble.

Acid-sensitive, developer-soluble bottom anti-reflective coatings

Novel, developer-soluble anti-reflective coating compositions and methods of using those compositions are provided. The compositions comprise a multi-functional acid reacted with a multi-functional vinyl ether to form a branched polymer or oligomer. In use, the compositions are applied to a substrate and thermally crosslinked. Upon exposure to light and post-exposure baking, the cured polymers/oligomers will decrosslink and depolymerize, rendering the layer soluble in typical photoresist developing solutions (e.g., alkaline developers).

Photoimageable branched polymer

New lithographic compositions (e.g., for use as middle layers in trilayer processes) are provided. In one embodiment, the compositions comprise an organo-silicon polymer dispersed or dissolved in a solvent system, and preferably a crosslinking agent and a catalyst. In another embodiment, the organo-silicon polymer is replaced with a polyhedral oligomeric silsesquioxane-containing polymer and/or a polyhedral oligomeric silsesquioxane. In either embodiment, the polymer and/or compound should also include &#x2014;OH groups for proper cross-linking of the composition. When used as middle layers, these compositions can be applied as very thin films with a very thin layer of photoresist being applied to the top of the middle layer. Thus, the underlying bottom anti-reflective coating is still protected even though the overall stack (i.e., anti-reflective coating plus middle layer plus photoresist) is still thin compared to prior art stacks.

Thermally curable middle layer comprising polyhedral oligomeric silsesouioxanes for 193-nm trilayer resist process

Anti-reflective compositions and methods of using those compositions to form circuits are provided. The compositions comprise a polymer dissolved or dispersed in a solvent system. In one embodiment, the compositions comprise less than about 0.3% by weight of a strong acid. In another embodiment, the weight ratio of strong acid to weak acid in the composition is from about 0:100 to about 25:75. Examples of preferred weak acid compounds include phenolic compounds (e.g., Bisphenol S, Bisphenol A, &#x3b1;-cyano-4-hydroxycinnamic acid), carboxylic acids (e.g., acetic acid), phosphoric acid, and cyano compounds. The polymer and other ingredients are preferably physically mixed in a solvent system. The resulting compositions are spin bowl compatible (i.e., they do not crosslink prior to the bake stages of the microlithographic processes or during storage at room temperature).

Anti-reflective coating composition with improved spin bowl compatibility

Anti-reflective compositions are prepared from cellulosic binders with improved etch rates.

Fast-etching, thermosetting anti-reflective coatings derived from cellulosic binders

Anti-reflective coating compositions having improved etch rate, inter alia, are prepared from certain acrylic polymers and copolymers, such as, glycidyl methacrylate reacted with non-polycyclic carboxylic acid dyes and non-polycyclic phenolic dyes, all light absorbing at a wavelength of 193 nm.

Thermosetting anti-refective coatings

A method for making multilayer resist structures for microlithographic processing using a thermosetting anti-reflective coating is disclosed for a broad range of exposure wavelengths, said coating containing an active curing catalyst, ether or ester linkages derived from epoxy functionality greater than 3.0, a dye-grafted hydroxyl-functional oligomer, and an alkylated aminoplast crosslinking agent, all present in a low-to-medium alcohol-containing solvent.

Method for making multilayer resist structures with thermosetting

Anti-reflective coating compositions having improved etch rate, inter alia, are prepared from certain high molecular weight polymers and copolymers, particularly glycidyl methacrylate with grafted dyes.

Thermosetting anti-reflective coatings at deep ultraviolet

Mid-UV dyes enabling ultra thin antireflection coatings for multi-layer i-line photoetching are produced from bichalcones; bis-a-cyanoacrylates/bis-cyanoacrylamides; and 1.4 divinylbenzenes. The dyes are nonsubliminal and differentially insoluble in standard photoresist solvents.

Non-subliming mid-UV dyes and ultra-thin organic arcs having

A thermosetting anti-reflective coating and method for making and using the same is disclosed for a broad range of exposure wavelengths, said coating containing an active curing catalyst, ether or ester linkages derived from epoxy functionality greater than 3.0, a dye-grafted hydroxyl-functional oligomer, and an alkylated aminoplast crosslinking agent, all present in a low-to-medium alcohol-containing solvent.

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Manchester, MO, United States of America

Jim D Meador