Lam Research Corporation

Jim Bowers

Douglas L Keil

Rao Annapragada

Eric D Wagganer

Tri Le

A semiconductor manufacturing process wherein an organic anti-reflective coating (ARC) is plasma etched with selectivity to an underlying dielectric layer and/or overlying photoresist. The etchant gas is fluorine-free and includes a carbon-containing gas such as CO gas, a nitrogen-containing gas such as N , an optional oxygen-containing gas such as O , and an optional inert carrier gas such as Ar. The etch rate of the ARC can be at least 10 times higher than that of the underlying layer. Using a combination of CO and O with N and a carrier gas such as Ar, it is possible to obtain dielectric:ARC selectivity of at least 10. The process is useful for etching contact or via openings in damascene and self-aligned contact or trench structures.

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Brookfield, CT, United States of America

Jim Bowers