Samsung Display Co., Ltd.

Jihye Lee

Yoonhyeung Cho

Dongchan Kim

Wonsuk Han

Wonjong Kim

Dongkyu Seo

Sanghoon Yim

Eungdo Kim

Jiyoung Moon

Dahea Im

Hakchoong Lee

Haemyeong Lee

Jihwan Yoon

Jonghyuk Lee

Heechang Yoon

Myungsuk Han

Chulsoon Lee

Donghui Lee

Donghoon Kim

Hyungseok Jang

Yeongrong Park

Okkeun Song

Myungchul Yeo

Mukyung Jeon

Kangmoon Jo

Byoungduk Lee

Wonmin Yun

Ansu Lee

Yong-Koo Her

Youngcheol Joo

Yoonseok Ka

A light-emitting device and an electronic apparatus including the same are provided. The light-emitting device includes: a first electrode; a second electrode facing the first electrode; m emission units stacked between the first electrode and the second electrode and including an emission layer; and m−1 charge generation layers each between two neighboring emission units from among the m emission units, wherein m is an integer of 2 or more, at least one of the m emission units includes an inorganic mixed layer between the first electrode and the emission layer, and the inorganic mixed layer includes an inorganic insulating material and an inorganic semiconductor material.

Light-emitting device including inorganic mixed layer and electronic apparatus including the same

A light-emitting device and an apparatus including the same include a first electrode, a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode, wherein the organic layer includes m emission units and (m−1) charge generating units, each of the charge generating units being between the emission units that are adjacent to each other, m is a natural number of 2 or greater, at least one of the (m−1) charge generating units includes an n-type charge generating layer, a p-type charge generating layer, and a p-type hole injection layer, wherein the n-type charge generating layer includes an n-type organic compound and a metal material, and wherein the p-type charge generating layer and the p-type hole injection layer each independently include an inorganic semiconductor material.

Light-emitting device and apparatus including same

A display device includes a display element that includes a pixel electrode and a common electrode, a driving thin-film transistor, a first thin-film transistor connected to a gate electrode of the driving thin-film transistor and a first initialization voltage, a second thin-film transistor connected to the pixel electrode of the display element and a second initialization voltage line, and a common voltage line connected to the first initialization voltage line and the second initialization voltage line, wherein a voltage equal to a voltage transmitted to the common electrode is transmitted to the common voltage line.

Display device

An organic light-emitting device including: a first electrode; a second electrode facing the first electrode; a first emission unit and a second emission unit between the first electrode and the second electrode; and a first charge generation layer between the first emission unit and the second emission unit; wherein the first emission unit includes a first emission layer and a first inorganic buffer layer, and the second emission unit includes a second emission layer and a second inorganic buffer layer.

Organic light-emitting device

A light-emitting device and an apparatus including the same include a first electrode, a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode, wherein the organic layer includes m emission units and (m-1) charge generating units, each of the charge generating units being between the emission units that are adjacent to each other, m is a natural number of 2 or greater, at least one of the (m-1) charge generating units includes an n-type charge generating layer, a p-type charge generating layer, and a p-type hole injection layer, wherein the n-type charge generating layer includes an n-type organic compound and a metal material, and wherein the p-type charge generating layer and the p-type hole injection layer each independently include an inorganic semiconductor material.

A light-emitting device and a method of manufacturing the same are provided. The light-emitting device may include a first electrode, a second electrode, and an interlayer located between the first electrode and the second electrode. The interlayer may include an emission layer that includes a first material, a second material, and a third material. The first material may include an inorganic semiconductor compound, an inorganic insulator compound, or any combination thereof. The second material may include a lanthanide metal. The third material may include an organic compound. An apparatus including the light-emitting device is provided.

Light-emitting device and apparatus including the same

An organic light-emitting device includes an auxiliary layer located between a first electrode and a hole injection layer or a hole transport layer and including a metal fluoride. The metal of the metal fluoride may be a Group III metal having a high work function of 3.8 eV or more. The hole injection barrier at the interface between the first electrode and the hole injection layer may be adjusted by the fluoride of the high work function metal in the auxiliary layer so that the electron-hole charge balance and the efficiency of the organic light-emitting device may be improved.

A light-emitting device and an apparatus including the same include a first electrode, a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode, wherein the organic layer includes m emission units and (m&#x2212;1) charge generating units, each of the charge generating units being between the emission units that are adjacent to each other, m is a natural number of 2 or greater, at least one of the (m&#x2212;1) charge generating units includes an n-type charge generating layer, a p-type charge generating layer, and a p-type hole injection layer, wherein the n-type charge generating layer includes an n-type organic compound and a metal material, and wherein the p-type charge generating layer and the p-type hole injection layer each independently include an inorganic semiconductor material.

A light-emitting device includes: a first electrode; a second electrode facing the first electrode; light-emitting units in the number of n between the first electrode and the second electrode; and a charge-generation unit(s) in the number of n&#x2212;1 between the adjacent light-emitting units. The light-emitting units each include an emission layer, and at least one of the charge-generation unit(s) includes an n-type charge-generation layer, a p-type charge-generation layer, and an interlayer between the n-type charge-generation layer and the p-type charge-generation layer. The p-type charge-generation layer includes a first material and a second material, the first material includes a hole-transporting organic compound, an inorganic insulation compound, or any combination thereof, the second material includes at least one inorganic semiconductor compound, the interlayer comprises a third material, and the third material is selected from an organic compound, an inorganic semiconductor compound, and an inorganic insulation compound.

A light-emitting device includes a first electrode; a second electrode facing the first electrode; m emission units between the first electrode and the second electrode; and m&#x2212;1 charge-generating unit(s) between adjacent ones of the emission units, where m is a natural number of 2 or more. The emission units each include an emission layer. At least one of the charge-generating unit(s) includes an n-type charge-generating layer and a p-type charge-generating layer; and the n-type charge-generating layer includes a first material and a second material. The first material includes an organic electron transport compound; and the second material includes at least one selected from an alkali metal, an alkali metal alloy, an alkaline earth metal, an alkaline earth metal alloy, a lanthanide metal, and a lanthanide metal alloy. The light-emitting device may have improved hole and electron balance, a decreased driving voltage, and excellent efficiency and/or lifespan characteristics.

Light-emitting device, method of manufacturing the same, and apparatus including light-emitting device

An organic light-emitting device comprising: a first electrode; a second electrode facing the first electrode; a first emission unit, a second emission unit and a third emission unit between the first electrode and the second electrode; a first charge generation layer between the first emission unit and the second emission unit; and a second charge generation layer between the second emission unit and the third emission unit, wherein the first emission unit comprises a first emission layer, the second emission unit comprises a second emission layer, the third emission unit comprises a third emission layer, and at least one of the first emission unit, the second emission unit and the third emission unit comprises an inorganic buffer layer.

Disclosed is an organic light-emitting diode device including: a first electrode; a second electrode disposed opposite to the first electrode; m light-emitting units (where m is an integer of 2 or more) disposed between the first electrode and the second electrode, and including at least one light-emitting layer; and m-1 charge generation layers each interposed between two adjacent light-emitting units of the m light-emitting units; wherein at least one of the m-1 charge generation layers includes a compound for a charge generation layer, which includes a boron-containing compound bonded to a metal halide by a one-electron sigma bond.

Organic light-emitting diode device and compound for charge generation layer included therein

An organic electroluminescence device includes a first electrode, a hole transport region on the first electrode, a light emitting layer on the hole transport region, an electron transport region on the light emitting layer, and a second electrode on the electron transport region. The electron transport region includes an electron transport layer directly on the light emitting layer. The electron transport layer includes a first ternary compound including a halogen element.

Organic electroluminescence device, method for manufacturing the same, and display device including the same

A perovskite compound represented by Formula 1, a thin layer including the perovskite compound, and an optoelectronic device including the perovskite compound:[A][BB][X].&#x2003;&#x2003;Formula 1In Formula 1, A may be at least one selected from a monovalent organic cation, monovalent inorganic cation, and combinations thereof; Bmay be a thulium (II) (Tm) ion; Bmay be at least one divalent inorganic cation, where Bis free of (e.g., does not include) Tm; n may be a real number that satisfies 0&#x3c;n&#x2264;1; and X may be at least one monovalent anion.

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Yongin-si, South Korea

Jihye Lee