Olix Pharmaceuticals, Inc.

Samsung Electronics Co., Ltd.

Jihye Hwang

Sun Woo Hong

Isu Hong

Yoosang Hwang

Jiyoung Kim

Dong Jin Lee

Dong-Ki Lee

Daeik Kim

Kang-Uk Kim

Sungho Jang

Dong Ki Lee

Kyung-Eun Kim

Hyoungsub Kim

Nakjin Son

The present invention relates to an asymmetric siRNA which inhibits an expression of male pattern hair loss target genes and a use thereof and, more particularly, to an asymmetric siRNA which inhibits an expression of 3-oxo-5-alpha-steroid-4-dehydrogenase 1 (SRD5A1) gene, 3-oxo-5-alpha-steroid-4-dehydrogenase 2 (SRD5A2) gene or androgen receptor (AR) gene, and a composition for prevention or treatment of hair loss comprising the asymmetric siRNA.

Asymmetric siRNA for inhibiting expression of male pattern hair loss target gene

In certain aspects, provided herein are RNA complexes that inhibit Myeloid differentiation primary response gene 88 (MyD88) and/or Toll-like receptor 3 (TLR3) and are useful in the treatment of age-related macular degeneration (AMD). In certain aspects, provided herein are pharmaceutical compositions comprising such RNA complexes and methods of using such RNA complexes and pharmaceutical compositions.

Treatment of age-related macular degeneration using RNA complexes that target MyD88 or TLR3

Treatment of age-related macular degeneration using RNA complexes that target MYD88 or TLR3

A semiconductor device may include a substrate having a first region and a second region on a surface thereof, and a first semiconductor fin on the first region of the substrate with the first semiconductor fin including a first trench therethrough. A first gate electrode may be provided in the first trench, and first and second source/drain regions may be provided in the first semiconductor fin, with the first gate electrode between the first and second source/drain regions. A second semiconductor fin may be provided on the second region of the substrate with the second semiconductor fin including a second trench therethrough, a second gate electrode may be provided in the second trench, and third and fourth source/drain regions may be provided in the second semiconductor fin with the second gate electrode being between the third and fourth source/drain regions.

Semiconductor device and method of fabricating the same

Growing community of inventors

Geonggi-do, South Korea

Jihye Hwang