Samsung Display Co., Ltd.

Samsung Displayco., Ltd.

Kookmin University

Jihun Lim

Junhyung Lim

Jaybum Kim

Kyoungseok Son

Eoksu Kim

Joonseok Park

Jonghyun Choi

Taesang Kim

Myounghwa Kim

Dohyun Kwon

Yeonkeon Moon

Jonghan Jeong

Junhyun Park

Gun Hee Kim

Dae Hwan Kim

Byung Du Ahn

Jaehyeong Kim

Jehun Lee

Jaewoo Park

Hyunkwang Jung

A thin film transistor includes an active layer over a substrate, a gate electrode over the active layer, a gate line connected with the gate electrode, and a gate insulation film between the active layer and the gate electrode. The active layer includes a channel region overlapping the gate electrode, and a drain region and a source region on respective sides of the channel region. A length of a straight line connecting the drain region and the source region by a shortest distance may be greater than a width of the gate line parallel to the straight line.

Thin film transistor and display device including the same

A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.

Display device and method of manufacturing the same

A semiconductor device includes a base substrate, a first transistor disposed on the base substrate, the first transistor including a first input electrode, a first output electrode, a first control electrode, and a first semiconductor pattern including a crystalline semiconductor, a second transistor disposed on the base substrate, the second transistor including a second input electrode, a second output electrode, a second control electrode, and a second semiconductor pattern including an oxide semiconductor, a plurality of insulating layers disposed on the base substrate, and an upper electrode disposed on the first control electrode with at least one insulating layer of the plurality of insulating layers interposed between the upper electrode and the first control electrode. The upper electrode overlaps the first control electrode and forms a capacitor with the first control electrode.

Semiconductor device including an oxide thin film transistor

A method of manufacturing a semiconductor device. A pre first semiconductor pattern having a crystalline semiconductor material is formed on a base substrate. A pre first insulation layer is formed on the pre first semiconductor pattern. A first semiconductor pattern is formed by defining a channel region in the pre first semiconductor pattern. A pre protection layer is formed on the pre first insulation layer. A pre second semiconductor pattern including an oxide semiconductor material is formed on the pre protection layer. A pre second insulation layer is formed on the pre second semiconductor pattern. The pre second insulation layer is patterned using an etching gas such that at least a portion of the pre second semiconductor pattern is exposed. A second semiconductor pattern is formed by defining a channel region in the pre second semiconductor pattern. The pre protection layer has a material with a first etch selectivity that is different from a second etch selectivity of the second insulation layer with respect to the etching gas.

Crystalline semiconductor and oxide semiconductor thin-film transistor device and method of manufacturing the same

A display apparatus includes: a substrate on which a first area, a second area spaced apart from the first area, and a bending area between a first area and a second area and bent along a bending axis are defined; a first thin-film transistor ('TFT') and a second TFT; and a first conductive layer and a second conductive layer. The first TFT includes: a first active layer including polycrystalline silicon; a first gate electrode; and a first electrode disposed at a level which is the same as a level of the first conductive layer, and the second TFT includes: a second active layer including an oxide semiconductor; a second gate electrode; and a second electrode disposed at a level which is the same as a level of the second conductive layer.

Display apparatus and method of manufacturing the same

A transistor includes a semiconductor layer comprising a channel portion, a first contact portion and a second contact portion, a gate electrode facing the floating gate, and a floating gate disposed between the semiconductor layer and the gate electrode, the floating gate being insulated from the semiconductor layer and the gate electrode. The floating gate comprises an oxide semiconductor.

Transistor and display device having the same

Growing community of inventors

Hwaseong-si, South Korea

Jihun Lim