Electronics and Telecommunications Research Institute

Jiho Joo

Jaegyu Park

Gyungock Kim

Ki Seok Jang

Myungjoon Kwack

Kwang-Seong Choi

Yong Sung Eom

Gwang-Mun Choi

Hyundai Park

Chanmi Lee

Sang Hoon Kim

In Gyoo Kim

Seok-Hwan Moon

Sun Ae Kim

Jin Hyuk Oh

Myung Joon Kwack

Sang Gi Kim

Yongseok Choi

Hyuk Je Kwon

Ho-Gyeong Yun

Taeyong Kim

Gyung Ock Kim

Yong-Sung Eom

Ki-Seok Jang

Provided is an electronic device including a plurality of substrate electrodes on a substrate, the substrate electrodes including initial electrodes and spare electrodes, a bonding material covering the initial electrodes and the spare electrodes, module structures respectively provided on first initial electrodes of the initial electrodes, and solders between each of the first initial electrodes and each of the module structures, wherein the spare electrodes include second spare electrodes, wherein the module structures are not provided on the second spare electrodes, wherein the bonding material on the first initial electrodes is harder than the bonding material on the second spare electrodes.

Electronic device and its repair method

Provided is a method for manufacturing an electronic device. The method for manufacturing the electronic device includes mapping good elements and defective elements on a substrate, providing a first transparent structure including a first adhesive layer on the substrate, selectively providing first laser light to the defective elements to cure the first adhesive layer on the defective elements and separate the defective elements from the substrate, providing a second transparent structure including a second adhesive layer, which adheres to new elements replaced for the defective elements, on the substrate, and selectively providing second laser light to the new elements to bond the new elements to the substrate.

Method of manufacturing electric device

Provided is a method of fabricating a semiconductor package. The method of fabricating the semiconductor package include preparing a lower element including a lower substrate, a lower electrode, an UBM layer, and a reducing agent layer, providing an upper element including an upper substrate, an upper electrode, and a solder bump layer, providing a pressing member on the upper substrate to press the upper substrate to the lower substrate, and providing a laser beam passing through the pressing member to bond the upper element to the lower element.

Semiconductor package with intermetallic-compound solder-joint comprising solder, UBM, and reducing layer materials

Provided is a method for transferring and bonding devices. The method includes applying an adhesive layer to a carrier, arranging a plurality of devices, attaching the arranged devices to the carrier, applying a polymer film to a substrate, aligning the carrier to which the plurality of devices are attached with the substrate, bonding the plurality of devices to the substrate by radiating laser, and releasing the carrier from the substrate to which the plurality of devices are bonded.

Method for transferring and bonding of devices

Provided is a wire for electric bonding, which includes a solder wire and a composition for bonding adjacent to the solder wire, the solder wire is wet when reaches to a melting point as heat is transferred, the composition for bonding includes an epoxy resin, a reducing agent, and a curing agent, the reducing agent removes a metal oxide formed on a surface of the solder wire, and the epoxy resin is cured by chemically reacting with the reducing agent and the curing agent at a curing temperature.

Wire for electric bonding

Provided is a method for manufacturing a semiconductor package, the method including providing a semiconductor chip on a substrate, providing a bonding member between the substrate and the semiconductor chip, and bonding the semiconductor chip on the substrate by irradiating of a laser on the substrate. Here, the bonding member may include a thermosetting resin, a curing agent, and a laser absorbing agent.

Method for manufacturing semiconductor package

A 3D optical switch for transferring an optical signal between a plurality of layers of an optical integrated circuit, which comprises: a first optical coupler for distributing the optical signal input to a first optical waveguide deployed in a first layer among the plurality of layers to a second optical waveguide deployed in a second layer different from the first layer; a phase shifter for changing a phase of a first optical signal in the first optical waveguide passing through the first optical coupler and a phase of a second optical signal in the second optical waveguide distributed by the first optical coupler; and a second optical coupler for combining the first optical signal of which the phase is changed and the second optical signal of which the phase is changed is provided.

Three-dimensional optical switch

Provided are an optical coupling device and a method for manufacturing the same. The optical coupling device includes a first waveguide including a first forward tapered part, a second waveguide disposed on the first waveguide and including a first reverse tapered part in a direction opposite to the first forward tapered part, and an interlayer waveguide disposed between the first and second waveguides and having a thickness corresponding to a distance between the first forward tapered part and the first reverse tapered part.

Optical coupling device and method for manufacturing the same

Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.

Opto-electronic system including optical input/output device

Provided is a thermo-optic optical switch including an input waveguide configured to receive an optical signal, an output waveguide configured to output the optical signal, branch waveguides branching from the input waveguide to be connected to the output waveguide, and heater electrodes disposed on the branch waveguides and configured to heat the branch waveguides, wherein the branch waveguides includes first and second phase shifters having first and second thermo-optic coefficients of opposite signs.

Thermo-optic optical switch

Method of manufacturing optical input/output device

A wavelength division multiplexer is disclosed. The wavelength division multiplexer may include an input waveguide, in which a plurality of Bragg gratings for separating multiplexed optical signals into respective optical signals are provided, and a plurality of output waveguides connected to the input waveguide and configured to receive the optical signals separated by the plurality of Bragg gratings. The plurality of Bragg gratings may include a first Bragg grating including first protrusions each having a first width, and a second Bragg grating including second protrusions each having a second width larger than the first width. Each of the first and second protrusions may include a curved side surface, to which a corresponding one of the optical signals is incident.

Wavelength division multiplexer

Provided is an optical switch including a substrate, a first optical waveguide disposed on the substrate and having a conductive portion disposed on one surface thereof, and a second optical waveguide disposed on the substrate being spaced apart from the first optical waveguide and having an electrode portion disposed on one surface thereof. The electrode portion and the conductive portion face each other. The electrode portion controls an optical field between the first optical waveguide and the second optical waveguide.

Optical switch

Provided is an optical coupler including a substrate, a buffer layer on the substrate, a ridge waveguide having a first side surface and a second side surface opposed to the first side surface, and a first waveguide disposed adjacent to the second side surface. The first waveguide includes a first body part and a first connecting part extending from one end of the first body part to be inserted in the ridge waveguide. The first connecting part has a width decreasing in the direction away from the second side surface, and the ridge waveguide includes an extension part extending under an upper surface of the buffer layer.

Optical coupler

Provided is a photodetector including a substrate, a first doped region on the substrate, a second doped region having a ring structure, wherein the second doped region is provided in the substrate, surrounds the first doped region and is horizontally spaced apart from a side of the first doped region, an optical absorption layer on the first doped region, a contact layer on the optical absorption layer, a first electrode on the contact layer, and a second electrode on the second doped region.

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Daejeon, South Korea

Jiho Joo