United Microelectronics Corp.

Jih-Shun Chiang

Hung-Lin Shih

Po-Lun Cheng

Hsien-Liang Meng

Hsiang-Ying Wang

Che-Hung Liu

Chun-An Lin

Huan-Shun Lin

Ming-Chi Fan

Min-Chi Fan

Li-Yuen Tang

A complementary metal-oxide-semiconductor (CMOS) device includes a substrate with a first active region and a second active region; a first gate structure and a second gate structure, respectively disposed on the first active region and the second active region; a first spacer structure and a second spacer structure respectively disposed on sidewalls of the first gate structure and the second gate structure; a first LDD and a second LDD respectively disposed in the substrate at both sides of the first gate structure and the second gate structure; an epitaxial material layer, disposed in the first active region and located on a side of the first LDD; and a passivation layer, disposed on the first gate structure, the first spacer structure, and the first LDD and covering the second active region, wherein the passivation layer comprises a carbon-containing oxynitride layer.

Complementary metal-oxide-semiconductor device and fabricating method thereof

A semiconductor device is provided. The semiconductor device comprises a substrate, a gate structure, a spacer, a SiGelayer and a SiGeprotection layer. The gate structure is deposited on the substrate and the spacer is deposited on the sidewalls of the gate structure. The SiGelayer is deposited in the substrate on both sides of the spacer and extended to a portion beneath part of the spacer. In addition, the top level of the SiGelayer is higher than the surface of the substrate. Moreover, the SiGeprotection layer is deposited on the SiGelayer and the SiGeprotection layer comprises SiGe, where 0&#x2266;y1&#x3c;y.

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Changhua County, Taiwan

Jih-Shun Chiang