United Microelectronics Corp.

Jih-Cheng Yeh

Tri-Rung Yew

Coming Chen

Nai-Chen Peng

Tsong-Minn Hsieh

Ming-Yin Hao

A fabrication method for an integrated device having a capacitor in an interconnect system is described. At least a first exposed metal line and a second metal line are provided in an insulating layer. A stack layer is deposited and patterned to form a film stack structure over the second metal line. An inter-metal dielectric layer is formed over the film stack structure, the first metal line and the insulating layer. At least a first dual damascene interconnect and a second dual damascene interconnect are formed over and in contact with the first metal line and the film stack structure, respectively.

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Hsinchu Hsien, Taiwan

Jih-Cheng Yeh